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Ultra-rad-hard Sensors for Particle Physics Applications

Ultra-rad-hard Sensors for Particle Physics Applications. Li Brookhaven National Laboratory On behalf of CERN RD50 Collaboration. Pixel 2002, September 9-12, 2002, Carmel, CA. RD50 – 271 members.

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Ultra-rad-hard Sensors for Particle Physics Applications

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  1. Ultra-rad-hard Sensors for Particle Physics Applications • Li • Brookhaven National Laboratory • On behalf of CERN RD50 Collaboration Pixel 2002, September 9-12, 2002, Carmel, CA

  2. RD50 – 271 members J.Adey1, A.Al-Ajili2, P.Alexandrov3, G.Alfieri4, P.P.Allport5, A.Andreazza6, M.Artuso7, S.Assouak8, B.S.Avset9, A.Baldi10, L.Barabash11, E.Baranova3, A.Barcz12, A.Basile13, R.Bates2, B.Bekenov14, N.Belova3, G.M.Bilei15, D.Bisello16, A.Blumenau1, V.Boisvert17, G.Bolla18, V.Bondarenko19, E.Borchi10, L.Borrello20, D.Bortoletto18, M.Boscardin21, L.Bosisio22, G.Bredholt9, L.Breivik9, T.J.Brodbeck23, J.Broz24, A.Brukhanov3, M.Bruzzi10, A.Brzozowski12, M.Bucciolini10, P.Buhmann25, C.Buttar26, F.Campabadal27, D.Campbell23, C.Canali13, A.Candelori16, G.Casse5, A.Chilingarov23, D.Chren24, V.Cindro28, M.Citterio6, R.Coluccia29, D.Contarato25, J.Coutinho1, D.Creanza30, L.Cunningham2, V.Cvetkov3, C.Da Via31, G.-F.Dalla Betta21, G.Davies32, I.Dawson26, W.de Boer33, M.De Palma30, P.Dervan26, A.Dierlamm33, S.Dittongo22, L.Dobrzanski12, Z.Dolezal24, A.Dolgolenko11, J.Due-Hansen9, T.Eberlein1, V.Eremin34, C.Fall1, C.Fleta27, E.Forton8, S.Franchenko3, E.Fretwurst25, F.Gamaz35, C.Garcia36, J.E.Garcia-Navarro36, E.Gaubas37, M.-H.Genest35, K.A.Gill17, K.Giolo18, M.Glaser17, C.Goessling38, V.Golovine14, J.Goss1, A.Gouldwell2, G.Grégoire8, P.Gregori21, E.Grigoriev14, C.Grigson26, A.Groza11, J.Guskov39, L.Haddad2, R.Harding32, J.Härkönen40, J.Hasi31, F.Hauler33, S.Hayama32, F.Hönniger25, T.Horazdovsky24, R.Horisberger41, M.Horn2, A.Houdayer35, B.Hourahine1, A.Hruban12, G.Hughes23, I.Ilyashenko34, A.Ivanov34, K.Jarasiunas37, R.Jasinskaite37, T.Jin32, B.K.Jones23, R.Jones1, C.Joram17, L.Jungermann33, S.Kallijärvi42, P.Kaminski12, A.Karpenko11, A.Karpenko31, A.Karpov14, V.Kazlauskiene37, V.Kazukauskas37, M.Key27, V.Khivrich11, J.Kierstead43, J.Klaiber-Lodewigs38, M.Kleverman44, R.Klingenberg38, P.Kodys24, Z.Kohout24, A.Kok31, A.Kontogeorgakos45, G.Kordas45, A.Kowalik12, R.Kozlowski12, M.Kozodaev14, O.Krasel38, R.Krause-Rehberg19, M.Kuhnke31, A.Kuznetsov4, S.Kwan29, S.Lagomarsino10, T.Lari6, K.Lassila-Perini40, V.Lastovetsky11, S.Latushkin3, R.Lauhakangas46, I.Lazanu47, S.Lazanu47, C.Lebel35, C.Leroy35, Z.Li43, L.Lindstrom44, G.Lindström25, V.Linhart24, A.P.Litovchenko11, P.Litovchenko11, A.Litovchenko16, V.Litvinov3, M.Lozano27, Z.Luczynski12, A.Mainwood32, I.Mandic28, S.Marti i Garcia36, C.Martínez27, S.Marunko39, K.Mathieson2, A.Mazzanti13, J.Melone2, D.Menichelli10, C.Meroni6, A.Messineo20, S.Miglio10, M.Mikuz28, J.Miyamoto18, M.Moll17, E.Monakhov4, L.Murin44, F.Nava13, H.Nikkilä42, E.Nossarzewska-Orlowska12, S.Nummela40, J.Nysten40, R.Orava46, V.OShea2, K.Osterberg46, S.Parker48, C.Parkes2, D.Passeri15, U.Pein25, G.Pellegrini2, L.Perera49, B.Piatkowski12, C.Piemonte21, G.U.Pignatel15, N.Pinho1, S.Pini10, I.Pintilie25, L.Plamu42, L.Polivtsev11, P.Polozov14, J.Popule50, S.Pospisil24, G.Pucker21, V.Radicci30, J.M.Rafí27, F.Ragusa6, M.Rahman2, R.Rando16, K.Remes42, R.Roeder51, T.Rohe41, S.Ronchin21, C.Rott18, A.Roy18, P.Roy2, A.Ruzin39, A.Ryazanov3, S.Sakalauskas37, J.Sanna46, L.Schiavulli30, S.Schnetzer49, T.Schulman46, S.Sciortino10, G.Sellberg29, P.Sellin52, D.Sentenac20, I.Shipsey18, P.Sicho50, T.Sloan23, M.Solar24, S.Son18, B.Sopko24, J.Stahl25, A.Starodumov20, D.Stolze51, R.Stone49, J.Storasta37, N.Strokan34, W.Strupinski12, M.Sudzius37, B.Surma12, A.Suvorov14, B.G.Svensson4, M.Tomasek50, C.Trapalis45, C.Troncon6, A.Tsvetkov24, E.Tuominen40, E.Tuovinen40, T.Tuuva42, M.Tylchin39, H.Uebersee51, J.Uher24, M.Ullán27, J.V.Vaitkus37, P.Vanni13, E.Verbitskaya34, G.Verzellesi13, V.Vrba50, S.Watts31, A.Werner9, I.Wilhelm24, S.Worm49, V.Wright2, R.Wunstorf38, P.Zabierowski12, A.Zaluzhnyi14, M.Zavrtanik28, M.Zen21, V.Zhukov33, N.Zorzi21

  3. RD50 – 52 institutes 1 University of Exeter, Department of Physics, Exeter, EX4 4QL, United Kingdom; 2 Dept. of Physics & Astronomy, Glasgow University, Glasgow, UK; 3 Russian Research Center "Kurchatov Institute", Moscow, Russia; 4 University of Oslo, Physics Department/Physical Electronics, Oslo, Norway; 5 Department of Physics, University of Liverpool, United Kingdom; 6 INFN and University of Milano, Department of Physics, Milano, Italy; 7 Experimental Particle Physics Group, Syracuse University, Syracuse, USA; 8 Université catholique de Louvain, Institut de Physique Nucléaire, Louvain-la-Neuve, Belgium; 9 SINTEF Electronics and Cybernetics Microsystems P.O.Box 124 Blindern N-0314 Oslo, Norway; 10 INFN Florence – Department of Energetics, University of Florence, Italy; 11 Institute for Nuclear Research of the Academy of Sciences of Ukraine, Radiation PhysicDepartments; 12 Institute of Electronic Materials Technology, Warszawa, Poland; 13 Dipartimento di Fisica-Università di Modena e Reggio Emilia, Italy; 14 State Scientific Center of Russian Federation, Institute for Theoretical and Experimental Physics, Moscow, Russia; 15 I.N.F.N. and Università di Perugia – Italy; 6 Dipartimento di Fisica and INFN, Sezione di Padova, Italy; 17 CERN, Geneva, Switzerland; 18 Purdue University, USA; 19 University of Halle; Dept. of Physics, Halle, Germany; 20 Universita` di Pisa and INFN sez. di Pisa, Italy; 21 ITC-IRST, Microsystems Division, Povo, Trento, Italy; 22 I.N.F.N.-Sezione di Trieste, Italy; 23 Department of Physics, Lancaster University, Lancaster, United Kingdom; 24 Czech Technical University in Prague&Charles University Prague, Czech Republic; 25 Institute for Experimental Physics, University of Hamburg, Germany; 26 Experimental Particle Physics Group, Dept of Physics, University of Sheffield, Sheffield, U.K.; 27 Centro Nacional de Microelectrónica (IMB-CNM, CSIC); 28 Jozef Stefan Institute and Department of Physics, University of Ljubljana, Ljubljana, Slovenia; 29 Fermilab, USA; 30 Dipartimento Interateneo di Fisica & INFN - Bari, Italy; 31 Brunel University, Electronic and Computer Engineering Department, Uxbridge, United Kingdom; 32 Physics Department, Kings College London, United Kingdom; 33 University of Karlsruhe, Institut fuer Experimentelle Kernphysik, Karlsruhe, Germany; 34 Ioffe Phisico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia; ; 35 Groupe de la Physique des Particules, Université de Montreal, Canada; 36 IFIC Valencia, Apartado 22085, 46071 Valencia, Spain; 37 Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania; 38 Universitaet Dortmund, Lehrstuhl Experimentelle Physik IV, Dortmund, Germany; 39 Tel Aviv University, Israel; 40 Helsinki Institute of Physics, Helsinki, Finland; 41 Paul Scherrer Institut, Laboratory for Particle Physics, Villigen, Switzerland; 42 University of Oulu, Microelectronics Instrumentation Laboratory, Finland; 43 Brookhaven National Laboratory, Upton, NY, USA; 44 Department of Solid State Physics, University of Lund, Sweden; 45 NCSR DEMOKRITOS, Institute of Materials Science, Aghia Paraskevi Attikis, Greece; 46 High Energy Division of the Department of Physical Science, University of Helsinki, Helsinki, Finland; 47 National Institute for Materials Physics, Bucharest - Magurele, Romania; 48 University of Hawaii; 49 Rutgers University, Piscataway, New Jersey, USA; 50 Institute of Physics, Academy of Sciences of the Czech Republic, Praha, Czech Republic; 51 CiS Institut für Mikrosensorik gGmbH, Erfurt, Germany; 52 Department of Physics, University of Surrey, Guildford, United Kingdom

  4. OUTLINE • Introduction • Radiation induced defects levels in Si • Radiation induced degradation of electrical properties in Si detectors Leakage current Changes in electrical neutral bulk Space charge transformations and CCE loss • RD 50’s approaches to obtain ultra radiation hardness Material /impurity / defect engineering (MIDE) Device structure engineering (DSE) New materials • Future tasks to be carried out by RD 50 • Summary

  5. Introduction f LHC = 10 cm s ( R=4cm) ~ 3·10 cm 10 years 34 - 2 - 1 15 - 2 L f ( R =75cm) ~ 3·10 cm 13 - 2 Technology available, however serious radiation damage will result lt. f Possible up - grade = 10 cm s ( R=4cm) ~ 1.6 ·10 cm 35 - 2 - 1 1 6 - 2 L A focused and coordinated R&D effort is mandatory to develop reliable and cost - effective radiation hard HEP detector technologies for such radiation levels ---- The approval and formation of CERN RD50 Collaboration (6/02) Dedicated radiation hardness studies also beneficial before a luminosity upgrade Radiation hard technologies now adopted have not been completely characterized: Oxygen - enriched Si in ATLAS pixels linear A deep understanding of radiation damage will be fruitful also for the g collider where high doses of e, will play a significant role.

  6. CERN RD50 Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

  7. Radiation induced degradation of electrical properties in Si detectors

  8. Parameterization of Leakage current J= eq : leakage current constant Annealing behavior: (t)= I ·exp(-t/I )+ + 0 - ·ln(t/t0) I =1.2x10-17 A/cm =3.1x10-18 A/cm 0 = -9x10-17 A/cm+4.6x10-14 /Ta AK/cm t0=1 min 1/ I= k0I exp(-EI/kBTa ) k0I =1.2 x10-18/s, EI=1.1 eV M. Moll, Ph.D. Thesis, University of Hamburg, 1999

  9. Bulk Damage (electrical neutral bulk, ENB) Si bulk resistivity increases with fluence and saturates near the intrinsic value of about 300 k cm B. Dezillie et al., IEEE Trans. Nucl. Vol. 46, No. 3, (1999) 221 S. Pirollo et al., NIM A426 (1999) 126-130

  10. Space charge transformations and CCE loss Space charge transformation (SCT) takes one of the following three forms: • Space charge becomes more negative with radiation • due to the creation negative deep acceptors • (As-irradiated effect) • Space charge sign inversion (SCSI) or “type inversion” • Increase in full depletion voltage (Vfd) due to increase of net • space charge density Vfd = CCE loss at a given bias • Increase of space charge density during annealing at RT and • elevated temperatures (“Reverse annealing”) • More increase of Vfd • Space charge modifications due to trapping by • free carriers

  11. 1011 1012 1013 1014 1015 Donor removal: 1013 The removal rate is not a constant - 1012 1014 1016 1011  = 0.1/Nd0 1015 1013

  12. Proton Neutron G.Lindstroem, presented on "1st Workshop on Radiation hard semiconductor devices for very high luminosity colliders", CERN 28-30 November, 2001 RT annealing Reverse Annealing ET annealing Neutron

  13. Parameterization of Neff (As-irradiated and reverse annealing) Neff= Neff0 - Neff NY : Reverse annealing  Neff = NA+ NC+ NY NY = NY,(1- 1/(1+t/Y )) EY =1.33 eV k0,Y =1.5x1015 /s 1/ Y = k0,Y exp(-EY/kBTa ) NA : Beneficial annealing Eaa =1.09 eV k0,Y =2.4x1013 /s NA = NA0 exp(-t/a ) 1/ a = k0,a exp(-Eaa/kBTa ) 0 ga =0.018cm-1 gY =0.0516 cm-1 Stable defect Stable acceptor NC = NC0 (1-e-ceq) + gCeq c=0.1/Nd0 Removable donor NC0  0.7xNd0 M. Moll, Ph.D. Thesis, University of Hamburg, 1999

  14. Model for the reverse annealing • Reverse annealing in n, p, alpha irradiated Si detectors • (Clusters) • No reverse annealing in gamma irradiated Si • (Single defects only, no clusters) • Reverse annealing may be due to the • breaking off of clusters over time and temp, • releasing single defects: • Clusters V-V or related defects Releasing Single defects Z. Li et al., IEEE Trans. Nucl. Sci., Vol. 44, No. 3, (1997) 834

  15. Double-Junction/Double-Peak (DJ/DP) Effect DJ/DP effect and the 2-deep level model (Z. Li and H.W. Kraner, J. Electronic Materials, Vol. 21, No. 7, (1992) 701) 1.7x1014 n/cm2, Laser on p+ (D. Menichelli et al., NIM A426 (1999)135-139)

  16. Detail Modeling of (DJ/DP) Effect 2-deep level model(V. Eremin et al, Nucl. Instrum. & Meth. A476 (2002) 556-564. ) Increasing V Increasing V

  17. Degradation in Charge Collection Efficiency (CCE) Trapping term Depletion Volume term

  18. Radiation Hardness Material/ impurity/defect Engineering (MIDE) • Impurities intentionally incorporated into Si may serve to getter • radiation-induced vacancies to prevent them from forming the • damaging V-V and related centers • Impurities: O, Sn, N, Cl, H, etc. One example: oxygen O: Competing processes for V If [O] >>[V] and [V-O], then the formation rates of V2 and V2O will be greatly suppressed: Key: impurity concentration should be much larger than that of vacancies

  19. PKA cluster reactions  I + V  SiV + V  V2 I reaction V reaction Ci reaction I + Cs Ci V + O  VO Ci + Cs  CC I + V2V V + P  VP Ci + O  CO I + VP  P V + VO  V2O CO + I  COI * I + V3O  V2O V + V2O  V3O CC + I  CCI * * Not thought to be electrically active Material/ impurity/defect Engineering (MIDE) Defect kinetics model Reactions B. MacEvoy, 3rd ROSE Workshop 12-14 Feb 98

  20. Defect structure modeling More clusters for n-rad

  21. Defect kinetics modeling Both V2 and V2 O productions are greatly suppressed in oxygenated Si

  22. Material/ impurity/defect Engineering (MIDE) Review of Current Technologies HTLT : High Temperature Long Time oxidation Oxidation in straight O2 at high T (up to 1200 °C) for up to 24 hrs [Oi] up to 4·1017cm-3, uniform up to 50 ms. developed at BNL in 1992 DOFZ : Diffusion Oxygenated Float Zone Si Oxidation+long time diffusion in N2 at high T(up to 1150 °C) [Oi] up to 5·1017cm-3 developed in the framework of RD48 in 1998 • Advanced HTLT : High Temperature Long Time oxidation • Oxidation in straight O2 at high T (up to 1200 °C) for up to 216 hrs • [Oi] up to 4·1017cm-3, uniform up to 400 ms. • developed at BNL in 1999 • Thermal donor (TD) suppression (no change in initial doping) • TD introduction (initial doping dominated by TD)

  23. Little improvement with regard to neutron radiation by HTLT B. Dezillie et al., IEEE Trans. Nucl. Sci., Vol. , No. , (2000) 1892-1897 Maximum improvement with regard to gamma radiation by HTLT

  24. Oxygenation partially improve charged particle (p,  ) radiation hardness By a factor of 2-3 Thermal donor are not removed: delay of SCSI

  25. Model for the role of oxygen in rad-hardness 1000 V’s 3 O’s The local [O] is much smaller than [V] within the cluster Z. Li et al., Nucl. Inst. & Meth., A461 (2001) 126-132

  26. Material/ impurity/defect Engineering (MIDE) • Low resistivity starting Si materials • Delayed SCSI • Lower Vfd at higher fluences Nucl. Inst. Meth. A360 (1995) 445

  27. V2O2 Oi V Oxygen Dimers in Silicon Oxygen dimer O2i formed during pre-irradiation by Co60g-irradiation at 350ºC S. Watts et al., presented at Vertex 2001 neutral ? Thinner Detectors • More radiation tolerance: • For d = 50 m, the detector can be still fully depleted up to a • fluence of 2-3x1015 n/cm2 at bias of 200 V: • For a low starting resistivity Si (50 –cm), no SCSI up to • 1.5x1015 n/cm2 • For high starting resistivity Si ( 4 k-cm), still fully • depleted up to 3x1015 n/cm2 , even though SCSI taking place • at about 1x1013 n/cm2.

  28. Device Structure Engineering (DSE) • Multi-guard-ring system (MGS) • To increase the detector breakdown voltage • High operation voltage to achieve more radiation tolerance • Up to 1000 volts can can be achieved (up to 6x1014 n/cm2 tolerance) • Both CMS and ATLAS pixel detector systems use MGS • n on n and n on p detectors • Not sensitive to SCSI • Both CMS and ATLAS pixel detector systems use n on n p+ back side MGS n+ pixel JHU

  29. Multi-guard-ring system (MGS) • G. Bolla et al., NIM A435 (1999) 178

  30. 3-d Detector • Differ from conventional planar technology, p+ and n+ electrodes are • diffused in small holes along the detector thickness (“3-d” processing) • Depletion develops laterally (can be 50 to 100 m): not sensitive to thickness • Much less voltage used --- much higher radiation tolerance Sherwood I. Parker et al., UH 511-959-00

  31. Other Novel Structures p+-n+ /n/p+ configuration (low resistivity) Two-sided process -

  32. Other Novel Structures Low bias at the beginning • p+-n+ /n/n+ configuration (Medium to high resistivity) p - n /n/n configuration: • + + + Depletion from one side before SCSI o Depletion from both sides after SCSI o May work up to 1x10 n/cm rad. • 15 2 One sided processing • Bias Vb may be larger than Vf to get maximum depletion depth without break down • Single-sided process! p - n /n/n configuration + + + (Medium resistivity) th Z. Li, 9 Vienna Conference on Instrumentation, Vienna, Austria, February 19 - 23, 2001

  33. New Materials • Other semiconductor materials may have to be used for extremely high radiation (>1x1016 n/cm2 ) • Diamond, SiC, etc.

  34. Future RD50 Tasks • More studies in the fields of: • MIDE --- O and other impurities: H, Cl, N, oxygen-dimer, etc. • DSE --- Realize 3D and semi-3D detectors, and thin detectors (push rad-hardness/tolerance to a few times of 1x1015 n/cm2) • Make detectors with combined technologies: • Oxygenated detectors with MGS and/or 3D and novel detector structures • Oxygenated low resistivity detectors with MGS and/or 3D and novel detector structures • And so on (push rad-hardness/tolerance close to 1016 n/cm2) • Other semiconductor materials for extremely high radiation • SiC, etc. (push rad-hardness/tolerance over 1x1016 n/cm2)

  35. Summary • Different particles cause different displacement damage in Si material and detectors • Radiation-induced damages cause detector electrical properties to • degrade: • increase of detector leakage current • compensation of Si bulk (intrinsic bulk resistivity) • increase of negative space charge during radiation and annealing • space charge maybe modified by charge trapping • To obtain ultra high Radiation hardness/tolerance, newly-formed CERN RD50 Collaboration is poised to carry out various tasks • Material/impurity/defect engineering • Device structure engineering • Detector operation and modeling • Full detector integration • Other semiconductor materials for extreme radiation (> 1016 n/cm2) 1st RD50 - Workshop on Radiation hard semiconductor devices for very high luminosity colliders, CERN 2-4 October, 2002 http://rd50.web.cern.ch/rd50/1st-workshop/default.htm

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