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J.C.Jheng

J.C.Jheng. Introduction.

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J.C.Jheng

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  1. J.C.Jheng

  2. Introduction • The widely accepted paradigm is that the inhomogeneous distribution of indium facilitates high quantum efficiency of nitride-based light-emitting devices in spite of the tremendous density of dislocations peculiar to InGaN/ GaN structures grown on lattice-mismatched substrates. • Statistical fluctuations in the composition of a random alloy lead to potential fluctuations capable of spatially localizing excitons. Excitons localized in fluctuation minima prevent them from reaching nonradiative recombination sites and are considered to be the key to the high luminescence efficiencies observed in InGaN-based light-emitting diodes. • However, the character of exciton motion and the relevant process of establishing their distribution over the localized states in InGaN are not completely understood.

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