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AUIRF7648M2 and AUIRF7669L2 Automotive DirectFET ® 2 Power MOSFETs Optimized for Switching Applications

AUIRF7648M2 and AUIRF7669L2 Automotive DirectFET ® 2 Power MOSFETs Optimized for Switching Applications. PRESS RELEASE. DATA SHEET. HI-RES GRAPHIC.

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AUIRF7648M2 and AUIRF7669L2 Automotive DirectFET ® 2 Power MOSFETs Optimized for Switching Applications

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  1. AUIRF7648M2 and AUIRF7669L2 Automotive DirectFET®2 Power MOSFETs Optimized for Switching Applications PRESS RELEASE DATA SHEET HI-RES GRAPHIC These automotive DirectFET 2 power MOSFETs are optimized with low gate charge for switching applications used in Switch Mode Power Supplies (SMPS), Class D Audio systems, High Intensity Discharge (HID) lighting, and DC-DC applications used in electric and hybrid electric vehicles. Automotive HOME PAGE • Features • Advanced process technology • Optimized for Automotive Motor Drive, DC-DC and other heavy load applications • Exceptionally small footprint and low profile • High power density • Low parasitic parameters • Dual sided cooling • Repetitive avalanche capability for robustness and reliability • Lead free, RoHS compliant • The AUIRF7648M2 features a PCB footprint 54% smaller than a DPak while the AUIRF7669L2 features a PCB footprint 60% smaller than a D2Pak. With package current ratings of 179A and 375A respectively for each device, the DirectFET package places no constraint on current capability of the silicon and moreover the maximum package current ratings far exceed the limits of traditional DPak and D2Pak packages. • Advantages • The AUIRF7648M2 and AUIRF7669L2 offer low RDS(on) and are targeted for switching applications where low gate charge is important to keep switching losses to a minimum. The DirectFET package has very low parasitic inductance giving the part excellent high frequency switching performance with reduced waveform ringing which in turn helps limit EMI and filter size. • Automotive DirectFET 2 packaging concept has three fundamental values: • Minimal thermal impedance with the dual sided cooling option • Minimal parasitic package inductance through the elimination of wire bonds • Very low package resistance to minimize conduction losses • Equipped with these fundamental values the AU DF products offer: • Exceptional power density • Outstanding efficiency • System level cost savings September 2010

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