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Simulation of Heavily Irradiated Silicon Pixel Sensors - Double Junction model(DJ)

Simulation of Heavily Irradiated Silicon Pixel Sensors - Double Junction model(DJ). Zhou Xing & Marina Artuso. Main Content.

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Simulation of Heavily Irradiated Silicon Pixel Sensors - Double Junction model(DJ)

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  1. Simulation of Heavily Irradiated Silicon Pixel Sensors- Double Junction model(DJ) Zhou Xing & Marina Artuso

  2. Main Content • Goal : reproduce & verify DJ simulation results presented in V.Chiochia, et al. IEEE Trans. Nucl. Sci. 52-4(2005) 1067-1075, e-print: arXiv:physics/0411143 (CMS pixel sensor design) • Outline • Electric field map across the sensor • Double PN junction -> Double peak field • Fluence, bias and temperature dependence • Charge collection profile with a grazing angle heavy ion track(heavy ion model:dE/dX=80 e/um ) • High-z tail caused by high field at the backside of sensor Double Peak Field instead of linearly varying field after irradiation charge collection measurements provide a sensitive determination of the electric field within the detectors

  3. Comparison between linear field and double peak field Radiation induced traps After irradiation standard picture is no longer true Standard picture(linear field) Double peak field • Constant type-inverted effective doping density(space charge is uniformly distributed) • Electric fields vary linearly in depth reaching a maximum value at the p-n junction. • Use varying space charge density to characterize the irradiation effects • High field at both front(n+) and back side(p+) of the sensor

  4. Introduce radiation induced traps Two defect levels in the silicon band gap with opposite charge states(A/D) • Effective space charge density • Best fit • electric field map generated by TCAD was input to PIXELAV simulation program(CMS) ; • Agreement between measured and simulated charge collection profiles was judged subjectively Tuning procedure: 6 free parameters in this model

  5. Investigate THE field Sensor configuration : n+/n/p+ 2D reproduced result • 1Mev Neutron equivalent fluence of per year • Bias dependence • 2D test structure, slice at the middle of readout electrode

  6. Investigate THE field 2D reproduced result Higher fluence

  7. Investigate THE field 2D reproduced result • Temperature dependence

  8. Charge Collection Profiles TCAD Heavy Ion model : only one track; try to observe the “tail” 2D reproduced result N+ electrode 2-D simulation setup 10 readout electrodes P-spray isolation p+ backside Experiment setup

  9. Conclusion: • Doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. • Field generated by TCAD based on DJ model could be utilized in our pixel detector simulation

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