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Status on ALD deposition of NbN / AlN at Grenoble (WP12-2.2)

This project at Grenoble focuses on ALD deposition of NbN/AlN for RF cavities to enhance quality factor and reduce losses. The study compares thermal and plasma ALD techniques for conformal coating on complex shapes, aiming to optimize deposition parameters like temperature and plasma power. Results show successful AlN deposition at 250°C on niobium, with ongoing work on NbN deposition. The project has presented findings at prestigious conferences and continues to push the boundaries of ALD technology.

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Status on ALD deposition of NbN / AlN at Grenoble (WP12-2.2)

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  1. Status on ALD deposition of NbN/AlN at Grenoble (WP12-2.2) M. Benz, F. Weiss, E. Blanquet, C. Jiménez, A. Mantoux SIMaP/LMGP (Grenoble INP) matthieu.benz@simap.grenoble-inp.fr

  2. Introduction ALD technique AlNdeposition Future plans Conclusion      Motivations RF cavities: bulk niobium Functionalcoating (inside the cavity)  Enhancement of the quality factor and reduction of the electomagneticlosses A. Gurevich, "Enhancement of RF breakdown field of SC by multilayer coating". Appl. Phys.Lett., 2006. 88 Challenge : conformaldeposition on complexshape Atomic Layer Deposition

  3. Introduction ALD technique AlNdeposition Future plans Conclusion   Thermal ALD vs Plasma enhanced ALD • Sequential introduction of the precursors, surface saturation : conformalprocess • Mono-atomiclayers(ideally in the « ALD window ») • Higherreactivity, lowerdepositiontemperaturethan ALD • Slightlylessconformalthan thermal ALD

  4. Introduction ALD technique AlNdeposition Future plans Conclusion   State of the art • Most common settings in plasma ALD* : • Al source : TMA • N source : NH3 plasma • Temperature : 350°C • Thermal ALD issue : • NH3 reactiveabove 350°C • TMA decompositionabove375°C • -> smallprocessingwindow TMA New depositionstrategy : use of a hydrogen plasma for precursorreduction *Banerjee et al.,Phys. StatusSolidi C 12, No. 7, 1036–1042 (2015)

  5. Introduction ALD technique AlNdeposition Future plans Conclusion   Experimental conditions • Constant parameters : • 1000 cycles • 8 hPa in pressure • Pulses time • Studiedparameters : • Temperature • Plasma power Most criticalparameter : temperature

  6. Introduction ALD technique AlNdeposition Future plans Conclusion   Temperature influence on thickness • @ 2800W or high temperatures : • Lowoxygen contamination • Lowroughness • Good cristallinity 85nm AlN sustrate • Good processing conditions • Above 400°C @ 500W • Above 350°C @ 1000W • Above 250°C @ 2800W • Depositionsuccessful on niobium

  7. Introduction ALD technique AlNdeposition Future plans Conclusion    Niobium nitridedeposition • Tested • No transport • Homemade • Currentlytested • Transport @ 150°C • Currentlytested PDMAN Modified PDMAN TBTDEN General strategy : niobium reduction NbV(precursor) → NbIII(NbN)

  8. Introduction ALD technique AlNdeposition Future plans Conclusion  Conclusion • AlNsuccessfullydeposited at 250°C • Additionalcharacterizationongoing to publishresults • Resultspresentedduring 3 conferences : • ALD 2015 • EuroCVD 2015 • RAFALD 2015 (best poster award) • Nextstep : NbNdeposition (ongoing)

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