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半導體元件模擬

半導體元件模擬. 張書通. 張書通 副教授. 學歷：台大電機博士 經歷： 1. 中興大學奈米科技中心研發組組長 2. 工研院電子所顧問 3. 中原電子助理教授. 研究領域： 1. 矽鍺半導體技術 2. TCAD 元件製程與模擬 3. 新型奈米 CMOS 元件研究. 1. 2. Solar Cell 模擬. 3. Ge NCs LED. HfAlO. Ge dot. Si. Strained Si NMOS. 大綱. Part I: 能帶結構 - k.p - Tight-Binding - Pseudopotential

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半導體元件模擬

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  1. 半導體元件模擬 張書通

  2. 張書通 副教授 學歷：台大電機博士 經歷：1.中興大學奈米科技中心研發組組長 2. 工研院電子所顧問 3.中原電子助理教授 研究領域： 1. 矽鍺半導體技術2. TCAD元件製程與模擬3. 新型奈米CMOS元件研究 1 2 Solar Cell 模擬 3 Ge NCs LED HfAlO Ge dot Si Strained Si NMOS

  3. 大綱 • Part I:能帶結構 - k.p - Tight-Binding - Pseudopotential • Part II:傳輸特性 - Mobility & Velocity • Part III:模擬實作 - Strained Si CMOS devices - Solar Cell & LED - TFT - SiGe HBT - III-V HEMT

  4. 參考教科書 • Mark Lundstrom et al., “Nanoscale Transistors: Device Physics, Modeling, and Simulation,” Springer • Mark. Lundstrom, “Fundamentals of Carrier Transport,” Cambridege • Yongke Sun, Scott E. Thompson et al.,”Strain Effect in Semiconductor: Theory and Device Application,” Springer

  5. 評分方式 • 作業五次(寫程式)，每次10分 • 期中考20分 • 期末考20分(含上機考試) • 期末報告10分

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