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Device Design: Stage 2 (Modified Microchannel Design). Process Sequence Begin with four polished Si wafers Spin SU-8 (negative photoresist) on the Si wafers and pre-bake at 95°C
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Device Design: Stage 2(Modified Microchannel Design) Process Sequence • Begin with four polished Si wafers • Spin SU-8 (negative photoresist) on the Si wafers and pre-bake at 95°C • Align each of the four wafers with one of four masks and expose the SU-8 to ultraviolet light, then post-bake at 95°C • Develop the SU8 so that the unexposed areas are removed • Results in four distinct SU8 molds 5. Spin PDMS on the SU8 molds less than the vertical dimension of the SU-8 protrusions • Mix PDMS (Sylgard 184, Dow-Corning) 10:1 with curing agent • Spin on PDMS • Dip the Si wafer in a sodium dodecyl sulfate(SDS) adhesion barrier and allow it to dry naturally • Bake in box furnace for 2 hours at 70°C
PDMS STEP 1 • Start with a 4” diameter Silicon Wafer STEP 2 • Spin on SU-8 photoresist (orange) • Pre-bake at 95°C SU-8 Photoresist Silicon STEP 3 • Align the wafer with one of the four masks • Expose SU-8 to UV light • Post-bake at 95°C STEP 4 • Develop SU-8 in SU-8 developer • Dip wafer in 0.1 M sodium dodecyl sulfate (SDS) adhesion barrier and let dry naturally • Mix PDMS (Sylgard 184, Dow-Corning) 10:1 • with curing agent. • Spin on PDMS (purple). • Bake in box furnace for 2 h at 70°C. STEP 5 Device Design: Stage 2(Modified Microchannel Design)