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Power Semiconductor Devices

Power Semiconductor Devices. Power Diodes. Cross-sectional view of a pn -junction diode intended for power applications. I-V characteristics of a pn -junction diode. Breakdown Voltage of Non-Punch-through Diodes. for silicon. Breakdown Voltage of Punch-through Diodes.

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Power Semiconductor Devices

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  1. Power Semiconductor Devices Power Diodes Cross-sectional view of a pn-junction diode intended for power applications. I-V characteristics of a pn-junction diode

  2. Breakdown Voltage of Non-Punch-through Diodes for silicon. Breakdown Voltage of Punch-through Diodes Punch-through in a reverse-biased diode (a) reverse-biased diode with depletion layer extending completely across the drift region- punch-through condition (b) electric field profile of the punch-through condition in a reverse-biased diode doping in the n- drift region is negligible

  3. Depletion Layer Boundary Control

  4. Depletion Layer Boundary Control

  5. On-State Losses: Role of On-Resistance Turn-On Transient Turn-Off Transient Reverse Recovery

  6. Schottky Diodes

  7. Power MOSFETs Basic Structure

  8. Power MOSFETs Basic Structure

  9. Power MOSFETs

  10. Insulated Gate Bipolar Transistor

  11. Insulated Gate Bipolar Transistor

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