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Explore new data for a nanotube tip on a silicon surface, varying amplification levels and probe characteristics. Study traces, retaces, ediss, phase, and forcgrad data for different amplitudes. Length of nanotube: 35nm, Frequency: 51.26kHz.
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04291853 Ntb_si_probe2 Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/V Nanotube length 35 nm, f=51.26 kHz Ntb_Si_probe2_low_ampl_trace Ntb_Si_probe2_low_ampl_retrace Ntb_Si_probe2_low_ediss_trace Ntb_Si_probe2_low_ediss_retrace Ntb_Si_probe2_low_phase_trace Ntb_Si_probe2_low_phase_retrace Ntb_Si_probe2_low_forcgrad_trace Ntb_Si_probe2_low_forcgrad_retrace New data for a Ntb tip on a silicon surface
04291901.2 Ntb_si_probe2 Q=178, k=4.8 nm, DA=2200 mV, senst. 18.88 nm/V Nanotube length 35 nm, f=51.26 kHz Ntb_Si_probe2_interm_ampl_trace Ntb_Si_probe2_interm_ampl_retrace Ntb_Si_probe2_interm_ediss_trace Ntb_Si_probe2_interm_ediss_retrace Ntb_Si_probe2_interm_phase_trace Ntb_Si_probe2_interm_phase_retrace Ntb_Si_probe2_interm_forcgrad_trace Ntb_Si_probe2_interm_forcgrad_retrace New data for a Ntb tip on a silicon surface
04291904.4 Ntb_si_probe2 Q=178, k=4.8 nm, DA=900 mV, senst. 18.88 nm/V Nanotube length 35 nm, f=51.26 kHz Ntb_Si_probe2_high_ampl_trace Ntb_Si_probe2_high_ampl_retrace Ntb_Si_probe2_high_ediss_trace Ntb_Si_probe2_high_ediss_retrace Ntb_Si_probe2_high_phase_trace Ntb_Si_probe2_high_phase_retrace Ntb_Si_probe2_high_forcgrad_trace Ntb_Si_probe2_high_forcgrad_retrace
