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The study of ferroelectric switching using x-ray synchrotron radiation

The study of ferroelectric switching using x-ray synchrotron radiation. Carol Thompson. Science with Microbeams APS Scientific Advisory Cross-cut Review January 21, 2004.

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The study of ferroelectric switching using x-ray synchrotron radiation

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  1. The study of ferroelectric switching using x-ray synchrotron radiation Carol Thompson Science with Microbeams APS Scientific Advisory Cross-cut Review January 21, 2004 This work was supported by the U. S. Department of Energy, Basic Energy Sciences, under contract W-31-109-ENG-38, and the State of Illinois, USA, under Higher Education Collaborative Act.

  2. Introduction What is a ferroelectric Concentrate on epitaxial films Oxide perovskite system Structural response of epitaxial ferroelectric to electric field examples of dynamic studies Summary and Conclusions Domain studies, device studies, future studies require microbeams. Collaborators Chris Gunderson (Physics, NIU) Marian Aanerud (Masters 2002, Physics, NIU) Stephen Streiffer (MSD, ANL) Brian Stephenson (MSD, ANL) G. -R Bai (MSD,ANL) W. K. Kee (XFD-XRP,ANL) Armon McPherson, (currently at Sandia) Outline

  3. P(C/cm2) E (kV/cm) What are ferroelectrics? • Spontaneous permanent electric polarization. • Unit cell of crystal is non-centrosymmetric (charges separated) • A macroscopic sample with net zero polarization • combination of microscopic polarized domains.

  4. P(C/cm2) E (kV/cm) active film active film strain electrode electrode substrate substrate E (kV/cm) What are ferroelectrics? top electrodes packaging top electrodes

  5. Synchrotron techniques are well matched to the study of the ferroelectric systems • Structure-property relationships control: • dielectric, ferroelectric, piezoelectric, electrostrictive, pyroelectric and electro-optical properties • for actuators, sensors, electro-optical switches, non-volatile memory elements, hi-K dielectric, detectors… • Scattering and diffraction examine the structural aspects that control the properties • Symmetry changes, orientation, lattice parameters, domains configurations

  6. Scattering example: fingerprints domain evolution • Time-resolved scattering • 40 nm Pb(Ti,Zr)O3 film • 200 Hz • Scattering profile can fingerprint the domain configuration in epitaxial films P-V SrRuO3 PbTiO3 Difficult Easy q00l

  7. At each voltage, collect all scattering (area detector) Utilizes rocking curve of sample to “scan” q Chopper synchronized (Hybrid fill: Singlet produces <100 psec x-ray probe pulses Electrical stimulation of device synchronized/delayed so that sample is in particular electrical state during exposure High speed time-resolved Methods (BESSRC 12-ID-D)

  8. Close-up photograph of sample manipulation and contact region • X-ray spot must be smaller than the device. • And x-ray spot must be aligned with the device under electrical stimulation. 50 m capacitor Spot size used:5m x 5m K-B mirror focus

  9. More Pictures

  10. hf SrTiO3 detector SrRuO3 PMN-PT   Reciprocal Space Map 001 • Initial experiments: Focus on position of film Bragg peak region and its immediate neighborhood. • Scattering shown for epitaxial films (thickness~250nm) of PMN and PMN-PT STO STO SRO SRO PMN7PT3 PMN

  11. 10nsec PMN7-PT3 Structural Response to a Step Voltage • Response (speed) limited by size of device, not by how fast we can measure with x-rays yet • Smaller devices – smaller beams Applied Voltage +9V +10V -10V -11V

  12. Summary and Conclusion • Structural techniques available at synchrotrons well suited to ferroelectric systems • And it’s a growing field: see also other groups doing exciting studies of ferroelectric films and crystals using microdiffraction, x-ray topography, and reciprocal space mapping. • Examples from our work: • Progress in development of techniques to study structural response at 100 psec time scale • Need to go to smaller devices, embedded devices • Progress in switching studies: to 50m ‘play’ device: switching speed limited to ~10nsec • Smaller devices allow faster switching • Need for microbeam capabilities

  13. After apply +3V -3V phaseamplitude AFM- Piezoreponse image Preferred Domain Pinning • Piezo-response atomic force microscopy: • Recent direct observation of preferred domain pinning in fatigued ferroelectric films is reported using piezo-response atomic force microscopy. Direct observation of inversely polarized frozen nanodomains in fatigued, ferroelectric memory capacitors, E. L. Colla, I. Stolichnov, P. E. Bradely, and N. Setter, Appl Phys. Lett. 82, 1604 (2003). Samples: Pt-PZT-Pt films.

  14. Time-Resolved Synchrotron X-Ray Scattering • Data taken on 250 nm thick PMN-PT film (PT ~30-35%)

  15. Lattice response: time-resolved x-ray diffraction • Lattice response on different time scales • pulse with ~15 nsec rise time • 6.3 kHz triangle wave (“80 sec rise time”) PMN7-PT3

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