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NC STATE UNIVERSITY. Samples were provided by A. Roskowski and R.F. Davis of NCSU. Steady-State and Transient Electron Transport in AlN. R. Collazo , R. Schlesser, and Z. Sitar. February 12,2002. Goals & Experimental Approach. Electron transport
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NC STATE UNIVERSITY Samples were provided by A. Roskowski and R.F. Davis of NCSU Steady-State and Transient Electron Transport in AlN R. Collazo, R. Schlesser, and Z. Sitar February 12,2002
Goals & Experimental Approach • Electron transport • Electrons accelerate in an applied electric field. • Electrons decelerate by the emission of polar optical phonons. • Goals • Derive origin of electrons (relative to CBM) from EED spectra. • Determine carrier temperature as a function of applied field. • Establish conditions for transient transport and steady-state transport. • Estimate mean free path, drift velocities under different transport conditions. • Experimental approach • Extract conduction electrons from WB material into vacuum • Directly measure energy distribution (EED) of extracted electrons with an electron spectrometer
Direct measurement of the electron energy. Measurement of intrinsic material. Electron Energy Distributions (EED)
Test Structure Contact requirements: back contact: - no potential drop across Au/Ti/SiC top contact: - semitransparent for electrons - well defined potential at the surface Au 800Å Ti 560Å SiC 300 µm AlN ~1000Å Au 200Å Vacuum Spectrometer injection transport extraction – V V - VBIAS GND z
Band Diagram • Band bending of AlN/Au interface determined by core-level XPS.
Carrier Energy Balance/Steady State Electric Field • Electron Temperature Approximation • Maxwellian distribution with small drift component • Solution to Boltzmann Transport Equation E gain rate Energy in the carrier gas Steady State transport condition loss rate JZ: current density EZ:electric field Energy in the crystal lattice
Mobility/Energy Relaxation Rate Ratio/ Energy Balance Approach Specifically;
Drift Velocity Characteristic Curves • Assumptions: • Two different effective masses (0.48 m and 0.31 m) • Constant relaxation times ratio (7 - 10) Using the Mobility/Energy relaxation rate ratio:
Mean Free Path LO Phonon 99.2 meV Average Mean Free Path 5 nm ± 13.5 %
Transient Transport Average Carrier Energy Thermal Component Drift Component not negligible Drifted Electron Distribution
EED Field Dependence/ Transient Transport Length 80 nm
Drift Velocity Characteristic Curves/ Transient Velocity Overshoot • Transient effect length At 630 kV/cm
Summary of Results • EED results for intrinsic AlN: • Spectra show presence of hot electron transport • Electron temperature increases with the applied field • Observed secondary EED peak at fields > 400kV/cm • scattering into L-M satellite valley • Peak position compatible with band calculations • Estimated allowable ratio between electron mobility and energy relaxation time • Drift Velocity • Mean Free Path • Observed transient transport at fields > 520 kV/cm at a transport length of 80 nm • Velocity Overshoot • Sample quality is crucial (breakdown, leakage)