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Lecture 2: Wafer and Epitaxy Techniques

Lecture 2: Wafer and Epitaxy Techniques. Semiconductor Substrate Production: Si, GaAs, InP , GaP, InAs, InSb……. SiC, Sapphire, GaN Wafer Growth: Czochralski Growth (CZ) Bridgman Growth of GaAs Float Zone Growth see Campbell Book pp.10-33 for (2)(3). Czochralski Growth (CZ).

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Lecture 2: Wafer and Epitaxy Techniques

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  1. Lecture 2: Wafer and Epitaxy Techniques Semiconductor Substrate Production: Si, GaAs, InP, GaP, InAs, InSb……. SiC, Sapphire, GaN Wafer Growth: • Czochralski Growth (CZ) • Bridgman Growth of GaAs • Float Zone Growth see Campbell Book pp.10-33 for (2)(3)

  2. Czochralski Growth (CZ)

  3. 200 mm Si wafer CZ facility 300 mm Si wafer in manufacture

  4. GaAs CZ Schematic Picture LEC =Liquid Encapsulated Czochralski growth GaAs melts at 1238 C. The vapor of Ga is less than 0.001 atm, while the vapor prssure of arsenic is about 10000 larger.

  5. GaAs MESFET commercial products made directly from GaAs substrate InP MOSFET (made in Purdue) directly fabricated from InP substrate (by Yanqing Wu) Better quality ? Epitaxy

  6. Still Active Research Field, e.g., APL High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy Y. Lin, J. A. Carlin, A. R. Arehart, A. M. Carlin, and S. A. Ringel Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (Received 6 July 2006; accepted 4 December 2006; published online 5 January 2007)

  7. Experts at Purdue Prof. Woodall Prof. Melloch

  8. Homework: Read Campbell Book: • Chapter 2 pp. 10-33 • Chapter 14.11, 14.13 pp. 378-391

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