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Manufacture of High Aspect Ratio Carbon Nanotube Atomic Force Microscopy Probes

Manufacture of High Aspect Ratio Carbon Nanotube Atomic Force Microscopy Probes. Y.N. Emirov 1 , J.D. Schumacher 1 , M. M. Beerbom 1 , B. Lagel 1 B.B. Rossie 2 , and R. Schlaf 1*. University of South Florida, Dept. of Electrical Engineering USF Center for Ocean Technology

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Manufacture of High Aspect Ratio Carbon Nanotube Atomic Force Microscopy Probes

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  1. Manufacture of High Aspect Ratio Carbon Nanotube Atomic Force Microscopy Probes Y.N. Emirov1, J.D. Schumacher1, M. M. Beerbom1, B. Lagel1 B.B. Rossie2, and R. Schlaf1* University of South Florida, Dept. of Electrical Engineering USF Center for Ocean Technology *) email: schlaf@eng.usf.edu

  2. Need: Atomic Force Microscopy Nanotube Cantilevers For High Aspect Ratio Feature Critical Dimension Metrology Image features incorrect Image features correct

  3. Carbon Nanotube Growth by PE-CVD • Plasma Enhanced Chemical Vapor Deposition (PECVD) • Precursors: Methane, acetylene, propane • Catalysts needed: Ni, Fe, Co (allows directed assembly) • DC Plasma helps cracking the precursor molecules

  4. Directed Assembly of CNT Through Catalyst Patterning

  5. Focused Ion Beam Patterning of Catalyst • Focused Ga-ion beam sputters sample • Computer controlled, complicated patterns are possible • 5 nm resolution • Dual beam instrument with integrated SEM

  6. Process: Masking Layers with Sockets • Cr masking layers prevent CNT growth in unwanted locations (i.e. on tip cone) • Access to buried catalyst through cylindrical cavity extending into the catalyst. Result: Good control over Ni patch

  7. CNT Growth From Si-Ox Sockets • Sockets in 130 nm Si-Ox layers • 10nm/30nm Cr/Ni at bottom of sockets • CNT with well defined diameter grow from each socket, ~25% are straight.

  8. 64 nm Tubes From 130 nm Sockets • Smaller CNT diameters possible • However, yield appears to depend on diameter

  9. Recent CNT Cantilevers • 70 nm x 400 nm CNT • Grown from cavity • Cold cathode PECVD • Acetylene/Ammonia precursors • Grown at 10 deg angle suitable for Nanoscope

  10. CNT Probe Test on Mikromasch TGZ02 Standard • TGZ02: 100 nm high steps • CNT probe shows better defined height image • Sharper edges Standard Si Probe CNT probe

  11. CNT vs. Standard Si Probe Comparison • Traces across Mikromasch test sample • FWHM of lines much smaller with CNT probe • Much steeper side wall curves

  12. Forward/Backward Scan Comparison • CNT probe shows much smaller difference between opposite direction scans than standard Si probe

  13. CNT Probe Before and After Scanning • No apparent damage to CNT from scanning process • CNT attached strongly enough to withstand torques during scanning • Socket provides stability

  14. Latest Results: • New, stable process • CNT are well-defined • Testing of these probes is underway • Patent pending Dimensions: 1µm long/50 nm wide

  15. Summary • Goal: Well-defined CNT on standard AFM tips suitable for critical dimension metrology • Concept has been demonstrated • Focused ion beam/e-beam litho patterning used for prototyping • Outlook: Testing on state-of-the-art industry structures/expansion of process to wafer scale • Thank you for your kind attention! Contact: schlaf@eng.usf.edu

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