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Hall effect and conductivity in the single crystals of La-Sr and La-Ba manganites. N . G . Bebenin 1) , R . I . Zainullina 1) , N . S . Chusheva 1) , V . V . Ustinov 1) , Ya . M . Mukovskii 2) ,
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Hall effect and conductivity in the single crystals of La-Sr and La-Ba manganites N.G.Bebenin1),R.I.Zainullina1), N.S.Chusheva1), V.V.Ustinov1), Ya.M.Mukovskii2), 1)Institute of Metal Physics, UD RAS, Ekaterinburg, Russia2)Moscow State Steel & Alloys Institute, Moscow, Russia
1. Introduction 2. Resistivity and Hall effect far below Curie temperature 2.1. The x<xc crystals: La0.85Sr0.15MnO3, La0.85Ba0.15MnO3, and La0.80Ba0.20MnO3 2.2. The x>xc crystals: La0.80Sr0.20MnO3, La0.75Sr0.25MnO3, and La0.72Ba0.28MnO3 3. Temperature-induced metal-semiconductor transition 4. Near TC and in the paramagnetic state 5. Conclusion
Resistivity of La1-xSrxMnO3 single crystals(Urushibara et al., PRB 1995)
Resistivity of La1-xSrxMnO3 single crystals(Anane et al., J. Phys.:Condens. Matter 1995)
Resistivity of La1-xSrxMnO3 and La1-xBaxMnO3 single crystals(Bebenin et al., PRB 2004, JETP 2000, J. Phys.: Condens. Matter 2005, JMMM 2006)Blue line: inverse minimum metallic conductivity, σmin-1, according to Salamon and Jaime, RMP 2001
Magnetoresistance Δ/=[(H)-(0)]/(0) for La-Sr single crystals (H=10 kOe)
Electronic specific heat coefficient γfor La1-xSrxMnO3 (T.Okuda et al. PRL 1998)
Resistivity and thermopower data suggest that in La0.85Sr0.15MnO3 (TC=232 K) and La0.85Ba0.15MnO3 (TC =214 K) variable range hopping (VRH) dominates below 100 K. Mott’s model Shklovskii-Efros model
Hall resistivity vs magnetic field for La0.72Ba0.28MnO3 (TC=310 K) Hall=RoH+RsM
Hall mobility in the single crystals with x<xc.xc=0.17 for La1-xSrxMnO3, xc≈0.22 for La1-xBaxMnO3
Low temperature (T< 200K) resistivity in the x>xc crystals obeys T2-law
Resistivity and Hall mobility in La2/3(Ca,Pb)1/3MnO3 single crystal (TC≈290 K) calculated on the base of data of Chun et al., PRB 1999.
Anomalous Hall coefficient in La1-xSrxMnO3 single crystals (Bebenin et al., PRB 2004)
Resistivity of La-Ba crystals near Curie temperature (H=10 kOe)=oexp[(Eo-E1m2)/kBT)
Magnetoresistance of La0.72Ba0.28MnO3 (TC=310 K) as a function of m2
Local activation energy εa=d(ln)/d(T-1) for La0.85Ba0.15MnO3 single crystals
Temperature dependence of the metallic phase volume in some lightly doped manganites derived from optical measurements (Mostovshchikova et al., PRB 2004)
Conclusion • Unlike La1-xSrxMnO3 family, in the x>xc La1-xBaxMnO3 single crystals electrons – not holes - are majority carriers. Thus the band structure depends on not only doping level but also on type of divalent ion. • The temperature-induced metal-semiconductor transition, if any, occurs well below TC. • Near Curie temperature, where CMR effect is observed, all the crystals are in a semiconductor state. Above TC, the crystals are likely to be in the semiconductor state, too. The sign of d/dT is not a sufficient indication of metallic state. • The conductivity mechanisms in the manganites with different doping is different. A general formal reason for the CMR effect in the La-Sr and La-Ba single crystals consists in the change of activation energy under application of a magnetic field.