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New Product Introduction: 2Mb/1Mb F-RAM ™

Discover Cypress's energy-efficient F-RAM solution for high-growth markets like printers, automotive electronics, and smart meters. F-RAM outperforms alternatives like EEPROM and Battery-Backed SRAM. Cypress leads the NVRAM market with its high-performance, reliable, and power-efficient products.

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New Product Introduction: 2Mb/1Mb F-RAM ™

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  1. New Product Introduction:2Mb/1Mb F-RAM™ Cypress Introduces the Industry’s Most Energy-Efficient 2Mb/1Mb Nonvolatile RAM Solution 2Mb/1Mb F-RAM New Product Introduction Title

  2. Demand for Better Performance Is Driving Nonvolatile RAM Growth • The Global TAM1 for Nonvolatile RAM (NVRAM) is forecasted to be $590M in 20142with a 10% CAGR through 2018 • Cypress’s NVRAM serves these high-growth NVRAM markets: • Multifunction printers • Industrial controls and automation • Smart meters • Automotive electronics • Computing and networking • The high-performance systems used in these high-growth markets require fast and highly reliable data capture on power loss • Customers prefer simple, battery-free and energy-efficient system designs • Alternative solutions such as EEPROM and Battery-Backed SRAM cannot meet these requirements • High-performance systems require fast, highly reliable, simple and energy-efficient nonvolatilememories • 1 Total Available Market • 2 Web-Feet Research Parallel F-RAM Serial F-RAM 2Mb/1Mb F-RAM New Product Introduction 2 Market Vision

  3. Cypress Is the NVRAM Market Leader Cypress offers the largest portfolio of serial and parallel Nonvolatile Random Access Memory products F-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM products F-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the endurance Densities range from 4Kb to 2Mb, and voltages range from 2.0 V to 5.5 V SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM products Access times range from 20 ns to 45 ns with unlimited read/write cycle endurance Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltages Asynchronous x8, x16, x32 SRAM parallel interfaces come in a wide variety of package options Integrated real-time clocks are also available on nvSRAM products Cypress: Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience Continues to invest heavily in new products Is committed to providing products that meet the most rigorous automotive and military standards Assures long-term supply of F-RAM and nvSRAM products Has shipped more than 1 billion NVRAM units Cypress offers the industry’s fastest, most energy-efficient and highly reliable NVRAM solutions to capture and protect the world’s most critical data 2Mb/1Mb F-RAM New Product Introduction 3 Market Positioning

  4. Cypress NVRAM 2Mb Serial F-RAM 2Mb/1Mb F-RAM New Product Introduction 4 Transition

  5. Serial Nonvolatile Memory Terms • Nonvolatile Memory (NVM) • Memory that retains its information on power loss • Nonvolatile Random Access Memory (NVRAM) • An NVM that allows direct access to stored data in any random order • Ferroelectric Random Access Memory (F-RAM) • A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data • Electrically Erasable Programmable Read-Only Memory (EEPROM) • A common NVM that uses floating-gate technology to store data • Page Write • A write to a fixed-length contiguous block of memory • Soak Time • The approximate 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers • Write Endurance • The number of times an NVM cell can be rewritten before it wears out • Wear Leveling • A method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached • AEC-Q100 • A quality standard defined by the Automotive Electronics Council used to verify the reliability of ICs and qualify them • for automotive applications 2Mb/1Mb F-RAM New Product Introduction 5 Terms of Art

  6. Serial NVM Design Problems • 1. Many electronic devices must reliably store system data in Nonvolatile Memory on power loss • EEPROMs require a 5-ms continuation of active power per Page Write for Soak Time • Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability • Mission-critical data is lost when memory is corrupted by exposure to radiation or magnetic fields • 2. Many data-logging applications exceed the 1-million write-cycle limitation of EEPROM • Wear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan • Wear Leveling requires up to 8x the memory capacity and additional software, increasing engineering effort and cost • 3. Systems using EEPROM consume excess power • For the 5 ms required for EEPROM Soak Time per Page Write • For the processing required to do Wear Leveling • The Cypress 2Mb serial F-RAM solves these problems. It: • EliminatesSoak Timeand the need for additional capacitors or batteries to complete a Page Write on power loss • Provides100 trillion write cycles,eliminating the need for Wear Leveling • Consumes 2x to 5x less active power than EEPROM • Protects data with radiation- and magnetic field-tolerant F-RAM memory cells • The Cypress 2Mb F-RAM offers 100 million times the endurance of EEPROM and consumes 2x to 5x less active power 2Mb/1Mb F-RAM New Product Introduction 6 Design Problems

  7. Serial F-RAM Is a Better Solution Simplify a conventional, complex, EEPROM-based design… By choosing F-RAM as your serial Nonvolatile Memory solution… To produce better solutions for multiple applications at a lower cost, especially for mission-critical applications. 2 x 2Mb for a 2Mb System 2x EEPROM capacity for Wear Leveling Multifunction Printers Industrial Controls Smart Meters Automotive Electronics Medical Wearables File System Controller Memory Worn Cell Wear Leveling software algorithm to increase EEPROM Write Endurance F-RAM pin-for-pin replacement for EEPROM SOIC8 Additional capacitor to maintain power for 5 ms per Page Write for Soak Time 2Mb/1Mb F-RAM New Product Introduction 7 Cypress Solution

  8. Cypress 2Mb Serial NVRAM vs. Competition’s 1 Comparable write frequency limited by EEPROM’s 5 ms for Soak Time 2 Conditions: Max current, SPI, 5 MHz, 2.7 to 3.6 V, −40° C to +85° C 2Mb/1Mb F-RAM New Product Introduction 8 Competitive Comparison

  9. $4.32 $0.40 $0.40 $0.50 $0.50 $5.22 2Mb Serial F-RAM Solution Value Competitor CompetitorEEPROM: (2x) ST M95M02 2Mb Price: (2 x $2.16): $4.321BOM Integration5-ms Soak Time Page Writes: Next-best alternative needs additional 2.2-mF board capacitance Price: $0.401Additional ValueWear Leveling firmware development: New firmware development, testing and certification 25 man-weeks @ $2,000/man-week amortized over 100,000 units Value Added: $0.50 5-ms Soak Time Page Writes BOM Integration Value Wear Leveling firmware development Total Additional Value Total Value Delivered Target Cypress Solution: Total Cost: 4% Total Savings: FM25V20A-G $5.00 $0.22 • 11ku web pricing 2Mb/1Mb F-RAM New Product Introduction 9 Pricing

  10. 2Mb SPI Serial F-RAM Applications Block Diagram Multifunction printers Industrial controls Smart meters Automotive electronics Medical wearables 2Mb SPI Serial F-RAM 4 Control Control Logic F-RAM Array Features Up to 40-MHz Serial Peripheral Interface (SPI) One-hundred-trillion read/write cycle endurance Direct hardware replacement for serial EEPROM Operating voltage range: 2.0-3.6 V Low standby (120 µA) and sleep (3 µA) currents One-hundred-year data retention Industrial temperature operation Automotive temperature operation Packages: 8-pin TDFN, 8-pin SOIC Instruction Register Address Register Serial Output Serial Input Data I/O Register Status Register Availability Collateral Sampling: Now (Industrial), Q2 2015 (Automotive) Production: Now (Industrial), Q2 2015 (Automotive) Preliminary Datasheet: Contact Sales 2Mb/1Mb F-RAM New Product Introduction 10 Product Overview

  11. Cypress NVRAM 2Mb/1Mb Parallel F-RAM 2Mb/1Mb F-RAM New Product Introduction 11 Transition

  12. Parallel Nonvolatile Memory Terms • Nonvolatile Memory (NVM) • A memory that retains data on power loss • Nonvolatile Random-Access Memory (NVRAM) • A Nonvolatile Memory that allows direct access to stored data in any random order • Write Endurance • The number of times a Nonvolatile Memory cell can be rewritten before it wears out • Battery-Backed SRAM (BBSRAM) • An SRAM memory connected to a battery to retain data on power loss • Restriction of Hazardous Substances (RoHS) • A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components 2Mb/1Mb F-RAM New Product Introduction 12 Terms of Art

  13. Parallel NVM Design Problems • 1. Many systems require fast Nonvolatile Memories with high Write Endurance • Traditional EEPROM and flash Nonvolatile Memories have slow write times (>1 ms) and limited Write Endurance (1M) • Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields • 2. Conventional BBSRAM solutions force undesirable trade-offs • Batteries require power-management circuits and firmware, which add system cost and increase complexity • Coin-cell batteries reduce solution reliability and have a limited lifetime, which mandates system maintenance and downtime • Data is lost if the battery charge is drained before system power is restored, which mandates fast time-to-repair • Battery cradles consume board space • Batteries contain heavy metals that violate RoHS regulations • Cypress 2Mb and 1Mb parallel F-RAMs solve these problems. They: • Provide 90-ns read/write access time and 100-trillion-cycle Write Endurance reliability • Protect data with radiation- and magnetic field-tolerant F-RAM memory cells • Require no batteries to retain data on power loss for the entire system lifetime • Store data reliably on power loss without the need for external power-management circuits and firmware • Eliminate the board space required for battery cradles • Comply with RoHS regulations Cypress RoHS-compliant 2Mb and 1Mb parallel F-RAMs are faster than traditional Nonvolatile Memories and more reliable and easier to implement than BBSRAM solutions 2Mb/1Mb F-RAM New Product Introduction 13 Design Problems

  14. Parallel F-RAM Is a Better Solution Simplify a complex BBSRAM-based design… By choosing F-RAM as your parallel Nonvolatile Memory solution… To produce more reliable solutions for mission-critical applications at higher speeds and at a lower cost. Standard SRAM memory Industrial Automation Computing and Networking Battery required to retain data on power loss Battery-free parallel F-RAM solution Extra board area for battery cradle 2Mb/1Mb F-RAM New Product Introduction 14 Cypress Solution

  15. Cypress 2Mb Parallel NVRAM vs.Competition’s 1 Low-power 2Mb asynchronous SRAM 2 4Mb Fujitsu F-RAM; Fujitsu does not offer 2Mb parallel F-RAM 3 4Mb Everspin MRAM; Everspin does not offer 2Mb parallel MRAM 4 Conditions: Max current, x16, 150 ns, 2.7 to 3.6 V, −40° C to +85° C 5 If a faster access time is needed, please see our portfolio of nvSRAM products that offer access times as low as 20 ns 6 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 2Mb/1Mb F-RAM New Product Introduction 15 Competitive Comparison

  16. 2Mb Parallel F-RAM Solution Value $2.24 Competitor CompetitorLow-power SRAM: R1LV0216BSB-5SI Price: $2.241BOM IntegrationBattery + cradle: Panasonic CR2477 + Memory Protection Devices Inc. BH1000G-ND Price: $2.121Power management circuit: Maxim MXD1210ESA Price: $3.702Additional ValueField battery replacement Value: $9.933Board space saving Value: $0.124 $2.12 Battery + Cradle $3.70 Power Management Circuit $5.82 BOM Integration Value $9.93 Field Battery Replacement $0.12 Board Space Saving Total Additional Value $10.05 Total Value Delivered $18.11 Target Cypress Solution: Total Cost: 31% Total Savings: FM28V202A-TG $12.50 $5.61 1 1ku web pricing 2 Supplier web pricing 3 $5.76 (four times in 15 years at $1.44 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time estimated at 75 seconds/battery) 4 12.25 square cm at $0.01 per square cm on an 8-layer PCB 2Mb/1Mb F-RAM New Product Introduction 16 Pricing

  17. 2Mb Parallel F-RAM Applications Block Diagram Industrial automation Computing and networking 2Mb Parallel F-RAM Column Decoder F-RAM Array 17 Address Address Latch Features Async parallel interface: 90-ns access time, x16 bus width One-hundred-trillion read/write cycle endurance Operating voltage range: 2.0-3.6 V Low standby (120 µA) and sleep (3 µA) currents One-hundred-year data retention Industrial temperature operation Packages: 44-pin TSOP II Row Decoder 5 Control Logic 16 I/O Latch & Bus Driver Control Data Availability Collateral Sampling: Now Production: Now Preliminary Datasheet: Contact Sales 2Mb/1Mb F-RAM New Product Introduction 17 Product Overview

  18. Here’s How to Get Started • Download the SPI Guide for F-RAM • Register to access online technical support: www.cypress.com • Request Preliminary Datasheet: Contact Sales Infotainment System by Hyundai Automotive Safety System by Hyundai Motor Control by SEW Smart E-Meter by Landis + Gyr Multifunction Printer by Ricoh 2Mb/1Mb F-RAM New Product Introduction 18 Getting Started

  19. References and Links • Cypress Nonvolatile Products website: www.cypress.com/nonvolatile • The source for all of our publicly available nonvolatile product documentation and collateral • Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap • For datasheets, and NDA roadmap requests, contact yourCypress Sales Representative or email cypressfram@cypress.com • Application Notes: Nonvolatile Products Application Notes • Knowledge Base: Nonvolatile Products Knowledge Base Articles 2Mb/1Mb F-RAM New Product Introduction 19 References and Links

  20. APPENDIX 2Mb/1Mb F-RAM New Product Introduction 20 Appendix

  21. F-RAM PortfolioLow Power | High Endurance CY15B104Q 4Mb; 2.0-3.6 V 40 MHz SPI; Ind2 CY15B102Q 2Mb; 2.0-3.6 V 25 MHz SPI; Auto E1 FM22L16/LD16 4Mb; 2.7-3.6 V 55 ns; x8; Ind2 NEW NEW FM28V202A 2Mb; 2.0-3.6 V 60 ns; x16; Ind2 FM25V20A 2Mb; 2.0-3.6 V 40 MHz SPI; Ind2 FM25H20/V20 2Mb; 2.0-3.6 V 40 MHz SPI; Ind2 FM24V10/VN10 1Mb; 2.0-3.6 V 3.4 MHz I2C; Ind2 FM28V102A 1Mb; 2.0-3.6 V 60 ns; x16; Ind2 512 Kb - 8 Mb FM25V05 512Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM25V10/VN10 1Mb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V05 512Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2 CY15B102N 2Mb; 2.0-3.6 V 60 ns; x16; Auto A3 CY15B101N 1Mb; 2.0-3.6 V 60 ns; x16; Auto A3 NEW NEW Wireless Memory NDA Required Contact Sales FM25V02/W256 256Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V02/W256 256Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2, Auto A3 FM33256 256Kb; 3.3V; 16 MHz SPIInd2; RTC4; Power Fail Watchdog; Counter FM28V020 256Kb; 2.0-3.6 V 70 ns; x8; Ind2 FM18W08 256Kb; 2.7-5.5 V 70 ns; x8; Ind2 FM25V01 128Kb; 2.0-3.6 V 40 MHz SPI; Ind2, Auto A3 FM24V01 128Kb; 2.0-3.6 V 3.4 MHz I2C; Ind2, Auto A3 FM31256/31(L)278 256Kb; 3.3, 5.0V; 1 MHzI2C;Ind2;RTC4;Power Fail; Watchdog; Counter FM1808B 256Kb; 5.0 V 70 ns; x8; Ind2 FM25640/CL64 64Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E1 FM24C64/CL64 64Kb; 3.3, 5.0 V 1 MHz I2C; Ind2, Auto E1 FM3164/31(L)276 64Kb; 3.3, 5.0 V; 1 MHzI2C;Ind2;RTC4;Power Fail; Watchdog; Counter FM16W08 64Kb; 2.7-5.5 V 70 ns; x8; Ind2 4 Kb - 256 Kb FM25C160/L16 16Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E1 FM24C16/CL16 16Kb; 3.3, 5.0 V 1 MHz I2C; Ind2 FM25040/L04 4Kb; 3.3, 5.0 V 20 MHz SPI; Ind2, Auto E1 FM24C04/CL04 4Kb; 3.3, 5.0 V 1 MHz I2C; Ind2 Production Sampling Development Concept Status 4 Real-time clock 1 AEC-Q100 −40ºC to +125ºC 2 Industrial grade −40ºC to +85ºC 3 AEC-Q100 −40ºC to +85ºC Availability QQYY QQYY 2Mb/1Mb F-RAM New Product Introduction 21 Roadmap

  22. 1Mb Parallel F-RAM Applications Block Diagram Industrial automation Computing and networking 1Mb Parallel F-RAM Column Decoder F-RAM Array 16 Address Address Latch Features Row Decoder Async parallel interface: 90-ns access time, x16 bus width One-hundred-trillion read/write cycle endurance Operating voltage range: 2.0-3.6 V Low standby (120 µA) and sleep (3 µA) currents One-hundred-year data retention Industrial temperature operation Packages: 44-pin TSOP II 5 Control Logic 16 I/O Latch & Bus Driver Control Data Availability Collateral Sampling: Q2 2014 Production: Q2 2014 Preliminary Datasheet: Contact Sales 2Mb/1Mb F-RAM New Product Introduction 22 Product Overview

  23. 2Mb Serial F-RAM Product Selector Guide 2Mb Serial F-RAM Part Numbering Decoder FM25V20A – XXX Temperature Range: Blank = Industrial, Q = Extended Industrial Package: DG = 8-TDFN, G = SOIC Die Revision Density: 20 = 2Mb Voltage: 2.0 - 3.6 V Interface: 25 = SPI Company ID: FM = Cypress 2Mb Automotive Serial F-RAM Part Numbering Decoder CY15B102Q – SXE Temperature Range: E = Automotive-E Pb Content: X = Pb-free Package: S = 8-SOIC Interface: Q = SPI Density: 102 = 2Mb Voltage: B = 2.0 - 3.6 V Marketing Code: 15 = F-RAM Company ID: CY = Cypress 2Mb/1Mb F-RAM New Product Introduction 23 Product Selector Guide

  24. 2Mb/1Mb Parallel F-RAM Product Selector Guide 2Mb/1Mb Parallel F-RAM Part Numbering Decoder FM28VXXXA - TG Package: TG = 8-TSOP II Die Revision Density: 202 = 2Mb, 102 = 1Mb Voltage: 2.0 - 3.6 V Interface: 28 = Async Parallel Company ID: FM = Cypress 2Mb/1Mb F-RAM New Product Introduction 24 Product Selector Guide

  25. Cypress 1Mb Parallel NVRAM vs.Competition’s 1 Low-power 1Mb asynchronous SRAM 2 For applications requiring faster access times, Cypress nvSRAM offers access times as fast as 25 ns at this density 3 Conditions: Max current, x16, 150 ns, 2.7 to 3.6 V, −40° C to +85° C 4 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids 2Mb/1Mb F-RAM New Product Introduction 25 Competitive Comparison

  26. 1Mb Parallel F-RAM Solution Value $0.94 Competitor CompetitorLow-power SRAM: R1LV0108ESF-5SI Price: $0.941BOM IntegrationBattery + cradle: Panasonic CR2477 + Memory Protection Devices Inc. BH1000G-ND Price: $2.121 Power management circuit: Maxim MXD1210ESA Price: $3.702 Additional ValueField battery replacement Value: $9.933Board space saving Value: $0.124 $2.12 Battery + Cradle $3.70 Power Management Circuit $5.82 BOM Integration Value $9.93 Field Battery Replacement $0.12 Board Space Saving Total Additional Value $10.05 Total Value Delivered $16.81 Target Cypress Solution: Total Cost: 43% Total Savings: FM28V102A-TG $9.66 $7.15 11ku web pricing 2Supplier web pricing 3$5.76 (four times in 15 years at $1.44 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time estimated at 75 seconds/battery) 412.25 square cm at $0.01 per square cm on an 8-layer PCB 2Mb/1Mb F-RAM New Product Introduction 26 Pricing

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