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Chapter 14 Single-Transistors Amplifiers

Chapter 14 Single-Transistors Amplifiers. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Chap 14 - 1. Noninverting Amplifiers: Common-Base and Common-Gate Circuits. AC equivalent for C-E Amplifier. AC equivalent for C-S Amplifier. Chap 14 - 2.

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Chapter 14 Single-Transistors Amplifiers

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  1. Chapter 14Single-Transistors Amplifiers Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 1

  2. Noninverting Amplifiers: Common-Base and Common-Gate Circuits AC equivalent for C-E Amplifier AC equivalent for C-S Amplifier Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 2

  3. C-B and C-G Amplifiers: Terminal Voltage Gain and Input Resistance For C-S Amplifier, take limit of voltage gain of C-E amplifier as Polarities of vbe and dependent current source gmvbe are both reversed, signal source is transformed to its Norton equivalent ro is neglected. Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 3

  4. C-B and C-G Amplifiers: Overall Voltage Gain Overall voltage gain is For C-S Amplifier, For RI >> R6, For , This is the upper bound on gain. For , ro can be neglected as gain<< mf Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 4

  5. C-B and C-G Amplifiers: Input Signal Range For small-signal operation, In case of FET, Relative size of gm and RI determine signal-handling limits. …for RI >> R4. Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 5

  6. C-B and C-G Amplifiers: Voltage Gain Calculations (Example) • Problem: Find overall voltage gain. • Given data: Q-point values and values for R1, R2, R3, R7 ,for both BJT and FET, RI =2 kW, R4 =12 kW. • Assumptions: Small-signal operating conditions. • Analysis: For C-E Amplifier, For C-S Amplifier, Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 6

  7. C-B and C-G Amplifiers: Output Resistance Desired resistance is that looking into collector with base grounded and resistor Rth in emitter. The redrawn equivalent circuit is same as that for C-E amplifier except resistance in base is zero and resistance in emitter is relabeled as Rth. And for the FET C-G amp Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 7

  8. Noninverting Amplifiers: Current Gain • Terminal current gain is the ratio of the current delivered to the load resistor to the current being supplied to the base terminal. Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 8

  9. C-B and C-G Amplifiers: Summary • C-B and C-G amplifiers have similar voltage and current gains. Numerical differences occur due to difference in parameter values of BJT and FET at similar operating points. • C-B amplifier can achieve high output resistance due to higher amplification factor of BJT. • C-B amplifier can more easily reach low levels of input resistance due to higher transconductance of BJT for a given operating current. • Input signal range of C-G amplifier is inherently larger than that of C-B amplifier. Microelectronic Circuit Design, 3E McGraw-Hill Chap 14 - 9

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