Introduction(3)

Introduction(3) • Low-temperature electroluminescence has been performed on InGaN LEDs by multiple groups： • Lee et al. observed a collapse in EL intensity beginning at 175 K,concluding the decrease in Mg activation at low temperature shifted more of the recombination into the p-layer. • Grzanka et al. saw a decrease in EL intensity of blue LEDs beginning at 200 K, but only for devices with an electron blocking layer. The collapse was concluded to be the result of the hole-blocking properties. • Hori et al. saw a collapse for both blue and green single quantum well LEDs below 140 K, and attributed it to a reduction in carrier capture efﬁciency.

Introduction(4) • It is worth noting that many of these theories are subtle variations on one another, as all depend on either reduced hole injection or increased electron overﬂow as the temperature decreases.These processes are two sides of the same coin. • In this paper, we investigate the behavior of high quality commercial 273 nm LEDs at temperatures ranging from 8 K to 300 K. • By examining the electroluminescence, photoluminescence, and capacitance-voltage characteristics of LEDs, we can observe how carriers are injected into the quantum wells.

Introduction(3)

Introduction(3)

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Introduction 3

Introduction 3

Introduction:

Chapter 3 Introduction

Outline Introduction………………………………………………………………………………………..….…3

Project 3 - Introduction

Introduction (3)

INTRODUCTION

Introduction

Flex 3 Introduction

uPortal 3: Introduction

Introduction

Introduction

Introduction

Introduction

Introduction:

Introduction:

ITR 3 Introduction

Chapter Introduction 3

Chapter 3: Introduction

Lab 3 Introduction