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轻核衰变实验计划. 华辉 北京大学物理学院. HIRFL-RIBLL1 合作组会议 , 近代物理研究所, 2013-08-15. 一、研究动机. 目标核. The 34 Mg (N=22) nucleus is considered as the heaviest in the “island of inversion”. Low 2+ energy: 660±1 keV Large B(E2, 01+(g.s.) 21+) = 541±102 e2fm4 => strong deformation| 2 |~ 0.54
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轻核衰变实验计划 华辉 北京大学物理学院 HIRFL-RIBLL1合作组会议, 近代物理研究所,2013-08-15
The 34Mg(N=22) nucleus is considered as the heaviest in the “island of inversion”. Low 2+ energy: 660±1 keV Large B(E2, 01+(g.s.) 21+) = 541±102 e2fm4 => strong deformation|2|~ 0.54 [N. Hinohara et al., Phys. Rev. C84, 061302 (2011)] [H. Iwasaki et al., Phys. Lett. B 522, 227 (2001)] [J.A. Church et al., Phys. Rev. C72, 054320 (2005)] [K.Yoneda et al., Phys. Lett. B 499, 233 (2001)]
4 607 S. Nummela et al., PRC63(2001)044316 2719 02+ Gated beta-times spectra Gate on 929 keV : 54.4 (5) ms Gate on 551 keV : 26 (1) ms
ANTOINE modif. SDPF-U-SI E3 46% β − 54% (30 ms) br.(γ)=46% ? (1+) (26(1) ms) 1+ 550 keV 4- (59 ms) 4 (54(1) ms) 34Al 34Al >50% 4970 (3-,4-,5-) ~5000 5-,3-,4- 4379 (3-,4-,5-) 42553 <10% 5330 (22+) 3510 21+ 3326 21+ 67 2719 02+ 61(40) 30% 2570 02+ 17(6) 11 10% 0 0g.s.+ 0 0g.s.+ 34Si 34Si (Iβ) Experiment modif. SDPF-U-SI
34Al的1+能级结构 ANTOINE modif. SDPF-U-SI E3 46% β − 54%
T 1/2= 20 (10) ms 34Mg 2n P2n 10% b-2n Qβ=11.7 MeV S2n = 8010keV 1+ 0 32Al En (MeV) Pn 40% b-n n b 5/2+ 0 Sn = 2470 keV 33Al 4- 657keV 4- 0 34Al 可能的衰变纲图
10%? 50%? 40%? 0%? 40%? 25?% 75?% 74% 26% 91.5% 可能的衰变路径 34Si 2.77(2) s 429 keV; 30% 1607 keV; 20% 32Al 33.0(2) ms 1941 keV;12% 3042 keV;4.3% 33Si 6.11(2) s 1847 keV; 75% 416 keV; 3.5% 34Alm 26(1) ms 34Alg.s. 54.4(5) ms 124 keV;28% 33Al 41.7(2) ms 1941 keV;2.5% 34Mg 20(10) ms Qβ(34Mg)=11.7 MeV, Sn(34Al)=2.47 MeV and S2n(34Al)=8.01 MeV.
rotational bands build on1/2+[200] build on 3/2-[321] (7/2- or 5/2+) 1243 705 (3/2+) 1w (1/2)+ 1w 546 10.5 ns 484 (5/2) - 2w 461 (7/2-) 1w (3/2-) 1w 221 159 L=1 L=1 (3/2)+ 2w 16 ns 50 3/2- 2w 0 1/2+ 2w 0 33Mg 31Mg 250 ms 可能的带结构 New SPIN ASSIGNMENTS Neyens et al., PRL94 (2005)
34Al S. Nummela,et al, PRC 63,044316(2001) Spectroscopy of 34,35Si by decay: sd-fp shell gap and single-particle states
Thin plastic Si PIN Si PIN 连续束模式下 二、研究方案 DSSD Veto light particles
束流强度估算 Beam:40Ar, 68.9MeV/u, ~200enA
Thank you! Peking University