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ELCT 774: Advanced Semiconductor Characterization

ELCT 774: Advanced Semiconductor Characterization. Dr. Goutam Koley Room 3A12, 777-3469, koley@engr.sc.edu Lecture Hours: Mon & Wed 4.05 AM – 5.20 PM SWEARINGEN 2A18 Office Hours: By appointment only Other information: To be posted on the website. Course Information.

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ELCT 774: Advanced Semiconductor Characterization

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  1. ELCT 774: Advanced Semiconductor Characterization Dr. Goutam Koley Room 3A12, 777-3469, koley@engr.sc.edu Lecture Hours:Mon & Wed 4.05 AM – 5.20 PM SWEARINGEN 2A18 Office Hours:By appointment only Other information: To be posted on the website

  2. Course Information Objective: To learn advanced semiconductor materials charcaterization techniques (special emphasis on nanoscale materials and their characterization) Reference books: Semiconductor measurements and Instrumentation: W. R. Runyan and T. J. Shaffner, Second Edition, McGraw Hill, 1998. ISBN 0070576971 Semiconductor material and device characterization, Dieter K. schroder, 2nd Edition, John Wiley and Sons, New York, 1998, ISBN # 0471241393 Other notes and handouts will be given from time to time, or references posted on the course website

  3. Schedule and Grading Class: Aug 26 – Dec 4, 28 lecture days Final Exam Week: Dec 9 - 16 Grading:Midterm: 30 % Final: 30 % Project presentation and report: 40 % Approximate Grades:A 90 - 100 B+ 85 - 89 B 80 - 84 C+ 75 - 79 C 70 – 74 D+ 65 – 69 D 60 – 64 F <60

  4. Course Contents 1 • Hall measurements and mobility (2) • Optical characterization (2) • Photoluminescence • Cathodoluminescence • Scanning probe microscopy (4) • Atomic force microscopy • Scanning tunneling microscopy • Scanning electron microscopy (2) • Basic principles • Electron beam induced current mapping • Cathodoluminescence

  5. Course Contents 2 • Transmission electron microscopy (2) • Modes of operation • Scanning TEM • Selective area diffraction • Auger Electron Spectroscopy • Secondary Ion Mass Spectrometry • Special characterization techniques for nanoscale structures (3) • Energy dispersive X-ray Spectroscopy • Focused Ion Beam technique • Raman spectroscopy • Discussion on Graphene: the new nanomaterial

  6. Lectures: 14 – 15 Classes Midterm: 1 Class Lab visits: 4 Classes (1 AFM, 1 SEM, 1 TEM, 1 Raman) Student Presentations: 8 Classes Final review: 1 Class Class schedule Note: A project report must be submitted by each of the students at the last day of classes (final review day)

  7. Projects must be related to Nano List of projects Atomic force microscopy applications to Nanotechnology Nanowire characterization using SEM micro-characterization (SEM, CL, EBIC, EDX) Nanowire characterization using TEM micro-characterization (STEM, SAD, EDX) Project descriptions

  8. 5. Carrier Mobility/Hall effect in Graphene Optical characterization of Nanostructures Mechanical characterization of Nanostructures Raman and EDX characterization of Graphene Characterization of 2D materials beyond graphene Characterization of Nanostructures using special AFM associated modes (surface potential, capacitance, current-voltage, etc.) Project descriptions 2 N.B. Please email me know your selected project topic latest by September 9

  9. Mobility represents the ease of electrons and holes to flow through the crystal under an externally applied electric field. Mobility 1 Slope gives the mobility only at low electric field Electron drift velocity saturates at high electric fields for Si. is valid only at low field • At high electric field, the velocity of electrons CANNOT increase linearly with voltage due to increased scattering from the lattice vibrations (electron loses the entire extra energy from electric field immediately) • At a particular electric field called the critical electric field, the mobility becomes almost zero (actually not defined anymore), and the velocity of the electrons become almost constant w.r.t. the electric field

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