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Array Detectors

Array Detectors. S W McKnight and C A DiMarzio. Focal Plane Arrays. Imaging Systems. H R Runciman, Thermal Imaging, CRC Press. Scanning vs. Staring Arrays. Scanning Systems Point detector or linear array with scanning optics Less complicated detector Calibration easier

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Array Detectors

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  1. Array Detectors S W McKnight and C A DiMarzio

  2. Focal Plane Arrays

  3. Imaging Systems H R Runciman, Thermal Imaging, CRC Press

  4. Scanning vs. Staring Arrays • Scanning Systems • Point detector or linear array with scanning optics • Less complicated detector • Calibration easier • Scanning system expensive, fragile • Fast detector • Staring Arrays • Multiple detectors elements to capture pixels of image • Less complicated optics (lighter, smaller, no moving parts) • Longer integration time to increase sensitivity • Need multiplexer for signal read-out • Charge-Coupled Devices (CCD’s) • Charge transfer and collection • Easier processing, less interconnects • CMOS • Individually addressed and processed pixels • Less power • No loss in tranfer

  5. S, Source G, Gate D, Drain n+ n+ SiO2 Insulator 20-100mm Channel: 2 to 500 mm into page P-Type Material NMOS B, Body N-Channel FET Structure Metal-Oxide-Semiconductor Channel Length 1 to 10 mm

  6. Energy Band Picture of MOSFET(No Bias—Flatband) E Ec Ef Ev Metal (Al or Poly-Si) Oxide (SiO2) Semiconductor (p-Si) z

  7. Energy Band Picture of MOSFET(Positive Gate Bias) E Ec Фb2 Ef Va Фb1 Ev Metal (Al or Poly-Si) Oxide (SiO2) Semiconductor (p-Si) z

  8. MOSFET Carrier Reconfiguration (Depletion Bias) E Фb2 Ec Ef Va Фb1 Ev Depletion Region Oxide (SiO2) Metal (Al or Poly-Si) Semiconductor (p-Si) z

  9. Creation of Depletion Layer and Inversion Channel • Depletion layer forms within 1μs after bias is applied • Inversion channel created by thermally generated carriers in ~ 1 s • For times short compared to 1 s, non-equilibrium situation with depletion region and empty channel. • Carriers created by optical absorption or external injection can be stored in well for many ms.

  10. Carrier Injection Current Injection Ec Optical Injection E Vo-Vi Ef Va>Vt Ev Depletion Region Ef Semiconductor (p-Si) Oxide (SiO2) Metal (Al or Poly-Si) z

  11. Charge-Coupled Device (CCD) G S S D D B B ~10 mm X nRows Channel Length 1 to 10 mm

  12. Charge Transfer in CCD J Allison, Electronic Engineering Semiconductors and Devices, McGraw-Hill

  13. Streetman & Banerjee, Solid State Electronic Devices, Prentice-Hall

  14. Focal Plane Arrays • Monolithic Technology • Detector and read-out CCD on same chip • Parallel processing (lower cost) • Improved ruggedness • Lower performance • Lower yield • Hybrid Technology • Detector and read-out fabricated separately and bonded • Single-device processing (more expensive) • Thermal mismatch • Choice of material for better performance • HgCdTe for IR detector • Silicon for CCD

  15. Hybrid Technology H R Runciman, Thermal Imaging, CRC Press

  16. Hybrid Focal Plane Array J L Miller, Principles of Infrared Technology, Van Norstrand Reinhold

  17. Array Interconnects J L Miller, Principles of Infrared Technology, Van Norstrand Reinhold

  18. Platinum-Silicide Schottky Detectors EB~0.22 eV ↔ λ=5.6 μ Si PtSi hν Streetman & Banerjee, Solid State Electronic Devices, Prentice-Hall

  19. PtSi Array Detectors • Low quantum efficiency (~1%) • Mid-Wave IR detection (1-5μ) • Long integration time (~1/60 s) • Good sensitivity ~0.05o C • Compatible with Si technology

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