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Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Alberi, et all , Phys Rev B 2008

Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Alberi, et all , Phys Rev B 2008. Jason Kaszpurenko Journal Club Feb. 3, 2011. Overview. Motivation Anticrossing Bandgap calculations Mobility Conclusion. Motivation.

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Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Alberi, et all , Phys Rev B 2008

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  1. Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossingAlberi, et all, Phys Rev B 2008 Jason Kaszpurenko Journal Club Feb. 3, 2011

  2. Overview • Motivation • Anticrossing • Bandgap calculations • Mobility • Conclusion

  3. Motivation • There are a wide variety of theories to describe DMS and DMO: For an overview please see a recent Nature Materials Review article • A quick summary is that there are a lot of theories and even though they are accepted they don't apply to all situations and have conflicting underlying principles • The authors want to take a look at some of the things that traditional theories don’t explain

  4. Motivation • Motivation is that the traditional model accounts for a lot of things but there are some hole transport properties that it doesn't adequately explain • Using the Mott theory for Metal-to-Insulator Transition theory the valence bands of the GaAs and the impurity band of Mn are supposed to intersect as Mn concentration goes up

  5. Motivation • DMFT and first-principle band-structure calculations support a separate impurity band for all doping levels • Experimental evidence shows weak localization • So in experiment there is a small impurity band 110 meV above the valence band

  6. What to do? • MIT is controversial when it comes to magnetic dopants in semiconductors because there is strong localization and p-d hybridization • Some studies have shown that the p state undergoes an anticrossing interaction with the extend p states causing the conduction and valence band to restructure

  7. So what is anticrossing? • Anticrossing (and crossing) occur in two level systems • These transitions occur below the conduction band and can create new allowed energy levels which can be probed • These states do not have to be bound • Originally I thought it was when an optical transition had occurred within a cavity, resonated and was reabsorbed • Not completely sold on this being the picture for this case

  8. Bandgap • One of the first things to appear from the Valence Band Anticrossing (VBAC) model is that the Mn band increases with Mn dopant concentration while a proportionally large decrease occurs in the valence band • Band gap calculations support this result when compared to other peoples work

  9. Bandgap • Photomodulated reflectance spectra of Ga1−x−yMnxBeyAs demonstrate that the valence to conduction-band transition increases in energy with increasing Mn concentration but shows no movement with Be concentration, suggesting an anticrossing interaction between the GaAs and Mn states. The dashed line marks the photomodulated reflectance transition of the underlying GaAs substrate while the arrows indicate the transitions of the film. • Experimentally determined movement of the band-gap energy of Ga1−xMnxAs as well as the theoretical trend predicted by the VBAC model E− valence band edge to conduction band • Movement of the valence and impurity band-edge energies of Ga1−xMnxAs as a function of Mn concentration.

  10. Mobility • Transport measurements were calculated: It should be noted that there are a lot of issues in doing this. • In this case when adding the dopant it decreased the mobilities of GaAs from 10-50 cm^2/V*s to 1-5 cm^2/V*s

  11. Mobility • The order of magnitude mobility change isn't associated with spin-disorder scattering because it is weakly dependent on temperature • The next culprit investigated was the effective mass of the holes • The justification for this becomes when you calculate the effective mass for the GaAs (0.47me) and plug those values into the Ga1-xMnxAs the carrier concentrations become far to great • 30me is the calculated value for the effective mass which is definitely on the large side but is consistent with values from VBAC

  12. Mobility • Dispersions of the impurity band in Ga0.99Mn0.01As and Ga0.96Mn0.04As, illustrating the increase in the width of the impurity band with increasing Mn concentration • These effective masses are consistent with another groups experimental findings

  13. Can we explain the MIT? • The MIT transition can still occur if the lifetime of the hole is broadened • In lower dopant concentrations the holes move via hopping and have lower lifetimes • In high dopant concentration the states start to hybridize and the system becomes a conductor (confused about this) Impurity bandwidth solid lines and heavy-hole lifetime broadening dashed lines for Ga1−xMnxAs and Ga1−xMnxP as a function of Mn concentration.

  14. Conclusion • A model was proposed to augment an existing models approach on the origins of ferromagnetism to explain certain shortcomings • This model predicts the bandgap accurately • More interestingly the effective mass becomes incredibly large • The authors propose that this model can be applied to other systems as well

  15. Questions? Thank you

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