1 / 38

ELECTRONICS DEVICE

ELCTRONICS DEVICE. ELECTRONICS DEVICE. Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc. : Arief Udhiarto, M.T Source : U.C. Berkeley. Schedule. Lectures: K.301 Mon. 15:00-15.50 AM K.301 Wed. 13.00-14.50 AM. Relation to Other Courses. Prerequisite:

koen
Download Presentation

ELECTRONICS DEVICE

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. ELCTRONICS DEVICE ELECTRONICS DEVICE Instructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc. : Arief Udhiarto, M.T Source :U.C. Berkeley

  2. Schedule • Lectures: K.301 Mon. 15:00-15.50 AM K.301 Wed. 13.00-14.50 AM Electrical Engineering Department University of Indonesia

  3. Relation to Other Courses • Prerequisite: • Simple pn-junction, BJT and MOSFET theory; BJT and MOSFET circuit applications. • Familiarity with the Bohr atomic model • Relation to other courses: • Electronics Circuit Electrical Engineering Department University of Indonesia

  4. Reading Material • Primary Text : Semiconductor Device Fundamentals : R. F. Pierret (Addison Wesley, 1996) • References Text: • Solid State Electronic Devices 4th Edition: B. G. Stretman, S. Banerjee (Prentice Hall, 2000) • Device Electronics for Integrated Circuits 3rd Edition: R. Muller, T. Kamins (Wiley & Sons, 2003) Electrical Engineering Department University of Indonesia

  5. SAP 1. Course : Electronics Device 2. Course Code : EES 210804 SKS: 4 Semester: 33. Instructor : Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH)Arief Udhiarto, M.T (AU) 4. Class System : Single 5. Course’s Objective : mastering in basic concept of integrated- circuit operation devices specially in silicon- integrated circuits 6. Grading System (%) : Homework (10) , MT (35) , Seminar (15) , FT (40) Electrical Engineering Department University of Indonesia

  6. Miscellany • Academic (dis)honesty • Departmental policy will be strictly followed • Collaboration (not cheating!) is encouraged • Classroom etiquette: • Arrive in class on time! • Turn off cell phones, pagers, MP3/MP4 players, etc. • No distracting conversations • Ask question as much as possible Electrical Engineering Department University of Indonesia

  7. Pre Test • What do you know about atom, electron, and hole? • What are the differences between conductor and semiconductor? • What is majority carrier related to semiconductor! 10 Minutes only Electrical Engineering Department University of Indonesia

  8. Course Outline PN-Junction Diode Semiconductor Fundamentals; Metal-Semiconductor Contact Bipolar Junction Transistor IC Processing (other subject) MOSFET Electrical Engineering Department University of Indonesia

  9. Overview of IC Devices and Semiconductor Fundamentals Reading Assignment : Pierret Chap 1, Chap 2 Electrical Engineering Department University of Indonesia

  10. An IC consists of interconnected electronic components in a single piece ( chip ) of semiconductor material In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO2 as the insulator and Al for the metallic interconnects. • In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium. Electrical Engineering Department University of Indonesia

  11. Evolution of Bipolar Junction Transistors Point Contact BJT 1947 SiGe BJT 2000 Si Nanowire BJT 2003 Electrical Engineering Department University of Indonesia

  12. From a Few, to Billions • By connecting a large number of components, each performing simple operations, an IC that performs very complex tasks can be built. • The degree of integration has increased at an exponential pace over the past ~40 years. • The number of devices on a chip doubles every ~18 months, for the same price. Electrical Engineering Department University of Indonesia

  13. Electrical Engineering Department University of Indonesia

  14. IC Technology Advancement • Improvements in IC performance and cost have been enabled by the steady miniaturization of the transistor Electrical Engineering Department University of Indonesia

  15. Advantages of Technology Scaling • More dies per wafer, lower cost • Higher-speed devices and circuits Electrical Engineering Department University of Indonesia

  16. Today and Tomorrow Electrical Engineering Department University of Indonesia

  17. The Nanometer Size Scale Electrical Engineering Department University of Indonesia

  18. State-of-the-art Transistor Size 1µm = 10-6m = 10-4 cm = 1000 nm 1 nm =10 Å Electrical Engineering Department University of Indonesia

  19. CZ Crystal Growth Electrical Engineering Department University of Indonesia

  20. Si Bulk Wafer Specifications Bulk Wafer Specifications Electrical Engineering Department University of Indonesia

  21. Purity of Device Grade Si • 99.999999999 % (so-called “eleven nines” ) • Maximum impurity allowed is equivalent to 1 mg of sugar dissolved in an Olympic-size swimming pool. Electrical Engineering Department University of Indonesia

  22. Flatness deviation and particle sizes Dimensions are equivalent to 1/1000 of a baseball placed inside a sports dome. Electrical Engineering Department University of Indonesia

  23. Crystallographic Planes Electrical Engineering Department University of Indonesia

  24. Miller IndicesCrystallographic Notation h: inverse x-intercept k: inverse y-intercept l: inverse z-intercept (Intercept values are in multiples of the lattice constant; h, k and l are reduced to 3 integers having the same ratio.) Electrical Engineering Department University of Indonesia

  25. Crystallographic Planes and Si Wafers Silicon wafers are usually cut along the (100) plane with a flat or notch to orient the wafer during IC fabrication Electrical Engineering Department University of Indonesia

  26. Bulk Si Wafer to IC Chip Electrical Engineering Department University of Indonesia

  27. Bohr Model Electrical Engineering Department University of Indonesia

  28. Electrical Engineering Department University of Indonesia

  29. Silicon Atom • 1s, 2s, 2p orbitals filled by 10 electrons • 3s, 3p orbitals filled by 4 electrons 4 nearest neighbors unit cell length = 5.43Å 5 × 1022 atoms/cm3 The Si Atom The Si Crystal “diamond cubic ” structure Electrical Engineering Department University of Indonesia

  30. Conduction Band and Valence Band Electron Potential Energy Electrical Engineering Department University of Indonesia

  31. The Simplified Energy Band Diagram Electrical Engineering Department University of Indonesia

  32. Semiconductors, Insulators, and Conductors • Totally filled band and totally empty bands do not allow current flow. (just as there is no motion of liquid in a totally filled or totally empty bottle • Metal conduction band is half-filled • Semiconductors have lower Eg’s than insulators and can be doped Electrical Engineering Department University of Indonesia

  33. Compound Semiconductors • “Zincblende Structure” • III-V compound semiconductors : GaAs, GaP, GaN, etc. • “important for optoelectronics and high speed ICs” Electrical Engineering Department University of Indonesia

  34. Density of States Electrical Engineering Department University of Indonesia

  35. Density of States at Conduction Band:The Greek Theater Analogy Electrical Engineering Department University of Indonesia

  36. Concept of a “hole” An unoccupied electronic state in the valence band is called a “hole” Treat as positively charge mobile particle in the semiconductors Electrical Engineering Department University of Indonesia

  37. Bond Model of Electrons and Holes Electrical Engineering Department University of Indonesia

  38. Electrons and Holes Electrical Engineering Department University of Indonesia

More Related