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Some ideas for a tracking and timestamp pixel detector suitable for CLIC

Some ideas for a tracking and timestamp pixel detector suitable for CLIC. Rafa Ballabriga, Michael Campbell, Xavier Llopart, Sami Vähänen CERN ESE. Outline. Assumptions for CLIC The effect of segmentation on performance (noise and jitter)

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Some ideas for a tracking and timestamp pixel detector suitable for CLIC

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  1. Some ideas for a tracking and timestamp pixel detector suitable for CLIC Rafa Ballabriga, Michael Campbell, Xavier Llopart, Sami Vähänen CERN ESE

  2. Outline • Assumptions for CLIC • The effect of segmentation on performance (noise and jitter) • The Timepix architecture and how it could be improved • Low mass bump bonding

  3. Assumptions for CLIC • ~312 bunches per train spaced by 0.5ns • 50Hz bunch rate • Pixel size <= 15 mm • Detector diameter 3cm • Detector length ~20cm • Physics hit occupancy ~20 hits/train • Background ~2M hits/train • Pixel occupancy on inner layer ~ 10-2?? • Total power budget ~ 100mW/cm2 • Power cycling allows at least x10 more during up time • Each pixel records bunch number (or a multiple thereof) for a given train • Full readout between trains

  4. Geometry for readout chip bump-bonded to Si Sensor

  5. Assumption for noise and jitter calculations • Constant power dissipation 1W/cm2 • 70% of the power dissipated in the input stage (differential) • Collection time must be faster than shaping time • Charge sharing not taken into account • The input transistor size is calculated for optimal ENC (Equivalent Noise Charge) for a given pixel size and shaping time • First order CR-RC shaper

  6. System schematic CFB VOUT ts IPR CinMOS ID CDET

  7. Noise equation Noise Equation: Calculated from EKV model W=OptimumW(Pixel Side)

  8. Geometry for readout chip bump-bonded to Si Sensor (input capacitance) CDET =e/xD Cpadlin=1pF/cm Cpad=50fF (25mm diameter pad) eis the permittivity (1.054 10-12 F cm-1 for Si) and xD is the thickness of the depletion region (xD equals 100mm in the results presented in this report)

  9. ENC as a function of shaping time ENC as a function of the pixel side for different shaping times. (1W/cm2, Si sensor Ileak = 1mA/cm2)

  10. Timing • Triangular signal, Qin=7000e- Giovanni Anelli, FEE 2006 Perugia

  11. Jitter

  12. Timepix Pixel Schematic Previous Pixel Clk_Read Clk_Countb Mux 4 bits thr Adj Mask Mux Preamp Input Disc 14 bits Shift Register Shutter Timepix Synchronization Logic THR Shutter_int Ctest P0 Conf Testbit Polarity P1 8 bits configuration Test Input Ovf Control Clk_Count Clk_Read Next Pixel Analog Digital

  13. Area use in Medipix3 pixel Area pixel: 55x55mm2 Preamplifier~1/8 pixel surface Analog part~30x30mm (if charge summing is not needed) (130nm IBM CMOS process) • Preamplifier • Shaper • Two discriminators with 4-bit threshold adjustment • Configuration bits • Arbitration logic for charge allocation • Control logic • Configurable counter.

  14. CLICpix readout architecture • Pixels 15 mm x 15 mm • 65nm technology or less • Matrix 1024 x 1024 pixels • 1W/cm2 analog on power (100mW/cm2 DC) • Each pixel records bunch number (or multiple thereof) • Timing precision 10ns or better • ToT in each pixel • All data read out at end of train

  15. Assembly Unique Control Smoltek’s technology enables control of the morphology and properties of carbon nanofibers Carbon Nanofiber* • Hybrid pixel with thinned readout chip (50mm thick) and thin sensor (100mm thick) • Carbon nanofibre bumps • Carbon nanofibre heat sink • Electromigration • occurs at >106A/cm2 • 100 % Yield • diameter of 20- • 200 nm • height from 50 nm- • 3 μm • Compatible with • CMOS-processes

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