220 likes | 676 Views
30 회 학술대회 , 광운대학교. 전이금속이 포함된 GaN 의 전자구조 및 자기적 특성해석. 이승철 , 이광렬 한국과학기술연구원 미래기술연구본부. Spintronics. Control of Spin and Charge of Electrons Simultaneously. Magnetic Tunneling Junction. Spin Field Effect Transistor. Spin dependent tunneling Magnetic RAM. Semiconductor based device
E N D
30회 학술대회, 광운대학교 전이금속이 포함된 GaN의 전자구조 및 자기적 특성해석 이승철, 이광렬 한국과학기술연구원 미래기술연구본부
Spintronics Control of Spin and Charge of Electrons Simultaneously Magnetic Tunneling Junction Spin Field Effect Transistor • Spin dependent tunneling • Magnetic RAM • Semiconductor based device • Next generation of spintronics D. Awschalom et al, Scientific American (2002)
Models for Ferromagnetism DMS Localized magnetic moment surrounded by non-local carrier • Impurity induces a polarization in the host (RKKY type interaction) TM Induced hole • Multiple impurities trapped by few carriers (percolation of magnetic polarons)
Success and Failure of Ga1-xMnxAs • Mn substitutes Ga in zincblende structure • Structure is compatible with GaAs 2DEG • Tc is correlated with carrier density • Ferromagnetic semiconductor with ordering temperature ~ 160 K Mn Ku et al., APL 82 2302 (2003)
GaMnAs Total DOS and Mn d state*10 As state
DMSs beyond Ga1-xMnxAs T. Dietl, Semicond. Sci. Technol. 17 (2002) 377
Requirements for DMS Materials • The carriers (holes) are polarized and DMS can serve as efficient sources for spin injection. • Because Curie temperature is correlated with the carrier concentration, the magnetic order can be manipulated with voltage.
Models for Ferromagnetism in Ga1-xMnxAs Localized magnetic moment surrounded by non-local carrier • Impurity induces a polarization in the host (RKKY type interaction) TM Induced hole • Multiple impurities trapped by few carriers (percolation of magnetic polarons)
Research Results Related to GaN:TM • GaN:Mn • Most of the studies based on GaN host has focused on this system. • Short range interaction of Mn. • Self interaction of electrons might be important in this system. • GaN:Cr • This system is based on the prediction of Sato et al. • Almost all the studies have focused on the magnetic interaction between transition metal ion.
First Principle Calculation • Density Functional Theory • Kohn-Sham Eq. ( Single Electron Schrodinger Equation) • Results Obtained from the Kohn-Sham Equation • Cohesive energy • Charge density • Electronic structure (band, DOS) • Nature of bonding • STM image simulation • Etc
Calculation Condition • Planewave Pseudopotential Method: VASP.4.6.21 • XC functional: GGA(PW91) • Cutoff energy of Planewave: 800 eV • 4X4X4 k point mesh with MP • Electronic Relaxation: Davidson followed by RMM-DIIS • Structure Relaxation: Conjugate Gradient • Force Convergence Criterion: 0.01 eV/A • Gaussian Smearing with 0.1 eV for lm-DOS • Treatment of Ga 3d state • Semicore treatment for GaN • Core treatment for GaAs
Structure of 64-Atom GaN Transition Metal 5th Nitrogen 1st NN Nitrogen 4th Nitrogen 3rd NN Nitrogen 2nd NN Nitrogen
Mn doped GaAs and GaN GaMnN GaMnAs
Partial DOSs having less-than half filled d state GaVN GaCrN GaMnN GaN:Mn(7) Up Spin Up Spin Up Spin Down Spin t2g eg
Partial DOSs having more-than half filled d state GaCoN GaFeN GaCuN GaNiN
Electron Occupation in GaN No Splitting of Valence p-band GaN:Co(9) GaN:Mn(7) Up Spin Up Spin Up Spin Down Spin Up Spin Up Spin Up Spin Down Spin t2g eg GaN:Ni(10) GaN:Cu(11) Up Spin Up Spin Up Spin Down Spin Up Spin Up Spin Up Spin Down Spin Filled Electron Unfilled Electron
Total and TM Local Magnetic Moments Half filled d electrons of TM 3+ valency 2+ valency
Interaction Range of TM V, Cr, Mn Fe, Co, Ni, Cu
Summary • Electronic and magnetic properties of transition metal doped GaN was studied using first principle calculation. • Valence band splitting was observed in the cases of Fe, Co, Ni, and Cu, which have more-than-half-filled character. • Cu doped GaN was predicted as the most probable candidates for DMS material. • Further studies on magnetic interaction should be followed to confirm the prediction.