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( Transmission Electron Microscopy:TEM ) 穿透式電子顯微鏡. Advisor: Kuen-Hsien , Wu Student: Jyun -Li, Wu. Outline. Introduction Principle Application Comparison Conclusion Reference. Introduction. Introduction. 1924 Louis de Broglie. 1926 Hans Busch. 1931 Ernst Ruska. 1939. Principle.
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(Transmission Electron Microscopy:TEM)穿透式電子顯微鏡 Advisor: Kuen-Hsien, Wu Student: Jyun-Li, Wu
Outline • Introduction • Principle • Application • Comparison • Conclusion • Reference
Introduction 1924 Louis de Broglie 1926 Hans Busch 1931 Ernst Ruska 1939
Principle 規格:(1)電子源:熱陰極電子鎗(鎢絲或是 LaB6燈絲)(2)最大加速電壓:120KV(3)倍率:最低 50x,最高600,000x(4)傾斜角度:正負30度 圖片來源: 南台科技大學
Principle Vacuum System :To increase the mean free path of the electron gas interaction for the voltage difference between the cathode and the ground without generating an arc. Electromagnetic Lens System: A series of electromagnetic lenses and apertures are used to reduce the diameter of the source of electrons and to place a small, focused beam of electrons onto the specimen. Sample Holder : TEM specimen stage designs include airlocks to allow for insertion of the specimen holder into the vacuum with minimal increase in pressure in other areas of the microscope. Imaging System : Imaging methods in TEM utilize the information contained in the electron waves exiting from the sample to form an image.
Principle LaB6 λ = h / p S=0.61λ/NA 圖片來源: http://www.hk-phy.org/atomic_world/tem/tem02_e.html
Principle 圖片來源: http://www.hk-phy.org/atomic_world/tem/tem02_e.html
Principle Elastic Scattering Inelastic scattering Back-scattered Electron 圖片來源:http://www.microscopy.ethz.ch/elast.htm
Application Analysis of materialcontain : • Material morphology • Material defects • Chemical composition • Crystallographic structure • Extremely high resolution images
Application Polycrystalline silicon Epitaxy structure 圖片來源:http://el.mdu.edu.tw/datacos//09510221040A/%E7%A9%BF%E9%80%8F%E5%BC%8F%E9%9B%BB%E5%AD%90%E9%A1%AF%E5%BE%AE%E9%8F%A1TEM.pdf
Application Bright field image Dark field image 圖片來源:http://el.mdu.edu.tw/datacos//09510221040A/%E7%A9%BF%E9%80%8F%E5%BC%8F%E9%9B%BB%E5%AD%90%E9%A1%AF%E5%BE%AE%E9%8F%A1TEM.pdf
Application BFI of particle in Al-Cu alloy DFI selected to show the particle seen on their side DFI showing the conspicuous close to vertical particle 圖片來源:http://el.mdu.edu.tw/datacos//09510221040A/%E7%A9%BF%E9%80%8F%E5%BC%8F%E9%9B%BB%E5%AD%90%E9%A1%AF%E5%BE%AE%E9%8F%A1TEM.pdf
Application Three-dimensional image
Application 南台科技大學-奈米科技研究中心:JEOL JEM- 1230穿透式電子顯微鏡 (120 kV TEM)TEM影像分析 1000元/小時 學校單位 1500元/小時 研究單位 2000元/小時 營利事業單位 成功大學-微奈米科技研究中心 :高解析場發射掃描穿透式電子顯微鏡 (High-Resolution Transmission Electron Microscopy ; HR-TEM) 680自行操作/小時 1800 代工學界/小時 3600 代工業界/小時
Comparison • TEM : • Samples must be conductive. • TEM sample need to prepare for thickness. • Using elastic scattering and inelastic scattering for image. • The resolution of TEM is 0.5 angstroms. • Specimen size must be under 3mm. • SEM : • Samples must be conductive. • Samples can not be a powder or a volatile items. • The scattered electrons in SEM are backscattered or secondary electrons. • SEM has only 0.4 nanometers. 圖片來源:http://highscope.ch.ntu.edu.tw/wordpress/?p=1599
Conclusion • Because of TEM analysis would be broken the sample, so we should consider what formation we can obtain in TEM, but TEM can provide high resolution better than SEM. • Both SEM and TEM are two types of electron microscopes and are tools to view and examine small samples.
Reference • http://investor.fei.com/ • http://highscope.ch.ntu.edu.tw/wordpress/?p=1599 • http://www.hk-phy.org/atomic_world/tem/tem02_c.html • http://news.gamme.com.tw/388598 • http://en.wikipedia.org/wiki/Transmission_electron_microscopy • http://homepage.ntu.edu.tw/~ntuipse/TEM.htm • http://www.microscopy.ethz.ch/elast.htm • http://www.differencebetween.net/science/difference-between-tem-and-sem/