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Conclusion

Conclusion. We have demonstrated GaN -based LEDs with DBR CBL beneath the p-pad electrodes. At a driving current of 20 mA , the light output power of the LEDs with DBR CBL was increased by 16.8% and 11.3% as compared with the LEDs without and with a SiO 2 CBL.

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Conclusion

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  1. Conclusion • We have demonstrated GaN-based LEDs with DBR CBL beneath the p-pad electrodes. At a driving current of 20 mA, the light output power of the LEDs with DBR CBL was increased by 16.8% and 11.3% as compared with the LEDs without and with a SiO2 CBL. • The improvement is contributed to the DBR CBL can deflect the current away from the p-electrode pads, but also prevent the light absorption by the opaque metal electrodes. The use of reflective CBL is a way to further increase the light output power of commercial LEDs without any additional process.

  2. References • Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking LayerC. C. Kao, Y. K. Su, Fellow, IEEE, and C. L. Lin • Fabrication and Characterization of SiO2-TiO2 and SiO2-TiO2-Er optical thin films Li-Lan Yang, Materials Science and Engineering • wikipedia http://zh.wikipedia.org/zh-tw/%E5%B8%83%E6%8B%89%E6%A0%BC%E5%AE%9A%E5%BE%8B

  3. Thanks for your attentions.

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