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EE 5340 Semiconductor Device Theory Lecture 26 – Spring 2011

EE 5340 Semiconductor Device Theory Lecture 26 – Spring 2011. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc. dy/dx - Numerical Differentiation. Ideal diode equation (cont.). J s = J s,p + J s,n = hole curr + ele curr

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EE 5340 Semiconductor Device Theory Lecture 26 – Spring 2011

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  1. EE 5340Semiconductor Device TheoryLecture 26 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc

  2. dy/dx - Numerical Differentiation

  3. Ideal diodeequation (cont.) • Js = Js,p + Js,n = hole curr + elecurr Js,p = qni2Dpcoth(Wn/Lp)/(NdLp) = qni2Dp/(NdWn), Wn<< Lp, “short” = qni2Dp/(NdLp), Wn>> Lp, “long” Js,n = qni2Dncoth(Wp/Ln)/(NaLn) = qni2Dn/(NaWp), Wp<< Ln, “short” = qni2Dn/(NaLn), Wp>> Ln, “long” Js,n<< Js,p when Na >> Nd

  4. Effect of carrierrec. in DR (cont.)

  5. High level injeffects (cont.)

  6. Summary of Va > 0 current density eqns. • Ideal diode, Jsexpd(Va/(hVt)) • ideality factor, h • Recombination, Js,recexp(Va/(2hVt)) • appears in parallel with ideal term • High-level injection, (Js*JKF)1/2exp(Va/(2hVt)) • SPICE model by modulating ideal Js term • Va = Vext - J*A*Rs = Vext - Idiode*Rs

  7. ln(J) Plot of typical Va > 0 current density equations data Effect of Rs Vext VKF

  8. Calculating k/q For Vt = kT/q = 0.025852 V, (T=300K) Then k/q = Vt/300K = 8.6173E-5 V/K

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