1 / 16

Lecture 6

Lecture 6. OUTLINE Semiconductor Fundamentals (cont’d) Continuity equations Minority carrier diffusion equations Minority carrier diffusion length Quasi-Fermi levels Poisson’s Equation Reading : Pierret 3.4-3.5, 5.1.2; Hu 4.7, 4.1.3. Derivation of Continuity Equation.

lloyd
Download Presentation

Lecture 6

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Lecture 6 OUTLINE • Semiconductor Fundamentals (cont’d) • Continuity equations • Minority carrier diffusion equations • Minority carrier diffusion length • Quasi-Fermi levels • Poisson’s Equation Reading: Pierret 3.4-3.5, 5.1.2; Hu 4.7, 4.1.3

  2. Derivation of Continuity Equation • Consider carrier-flux into/out-of an infinitesimal volume: Area A, volume Adx Jn(x) Jn(x+dx) dx EE130/230A Fall 2013 Lecture 6, Slide 2

  3. Continuity Equations: EE130/230A Fall 2013 Lecture 6, Slide 3

  4. Derivation of Minority Carrier Diffusion Equation • The minority carrier diffusion equations are derived from the general continuity equations, and are applicable only for minority carriers. • Simplifying assumptions: 1. The electric field is small, such that in p-type material in n-type material 2. n0 and p0 are independent of x (i.e. uniform doping) 3. low-level injection conditions prevail EE130/230A Fall 2013 Lecture 6, Slide 4

  5. Starting with the continuity equation for electrons: EE130/230A Fall 2013 Lecture 6, Slide 5

  6. Carrier Concentration Notation • The subscript “n” or “p” is used to explicitly denote n-type or p-type material, e.g. pn is the hole (minority-carrier) concentration in n-type mat’l np is the electron (minority-carrier) concentration in n-type mat’l • Thus the minority carrier diffusion equations are EE130/230A Fall 2013 Lecture 6, Slide 6

  7. Simplifications (Special Cases) • Steady state: • No diffusion current: • No R-G: • No light: EE130/230A Fall 2013 Lecture 6, Slide 7

  8. Example • Consider an n-type Si sample illuminated at one end: • constant minority-carrier injection at x = 0 • steady state; no light absorption for x > 0 Lp is the hole diffusion length: EE130/230A Fall 2013 Lecture 6, Slide 8

  9. The general solution to the equation is where A,B are constants determined by boundary conditions: Therefore, the solution is EE130/230A Fall 2013 Lecture 6, Slide 9

  10. Minority Carrier Diffusion Length • Physically, Lp and Ln represent the average distance that minority carriers can diffuse into a sea of majority carriers before being annihilated. • Example: ND = 1016 cm-3; tp = 10-6 s EE130/230A Fall 2013 Lecture 6, Slide 10

  11. Summary: Continuity Equations • The continuity equations are established based on conservation of carriers, and therefore hold generally: • The minority carrier diffusion equations are derived from the continuity equations, specifically for minority carriers under certain conditions (small E-field, low-level injection, uniform doping profile): EE130/230A Fall 2013 Lecture 6, Slide 11

  12. Quasi-Fermi Levels • WheneverDn = Dp  0, np  ni2. However, we would like to preserve and use the relations: • These equations imply np = ni2, however.The solution is to introduce twoquasi-Fermi levels FNand FPsuch that EE130/230A Fall 2013 Lecture 6, Slide 12

  13. Example: Quasi-Fermi Levels Consider a Si sample with ND = 1017 cm-3 and Dn = Dp = 1014 cm-3. What are p and n ? What is the np product ? EE130/230A Fall 2013 Lecture 6, Slide 13

  14. Find FN and FP: EE130/230A Fall 2013 Lecture 6, Slide 14

  15. Poisson’s Equation area A Gauss’ Law: E(x) E(x+Dx) Dx s :permittivity (F/cm)  :charge density (C/cm3) EE130/230A Fall 2013 Lecture 6, Slide 15

  16. Charge Density in a Semiconductor • Assuming the dopants are completely ionized: r = q (p – n + ND – NA) EE130/230A Fall 2013 Lecture 6, Slide 16

More Related