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Cutting-edge Nano Electronic Devices: A Comparative Review

This detailed comparison explores three advanced nano electronic devices - NanoRelay, Energy Reversible Relay, and NEMFET - highlighting their pros and cons in terms of performance, scalability, reliability, and potential applications. Each device's high Ion:Ioff ratio, robustness to temperature/radiation, and embedded memory features are examined alongside challenges such as hermetic packaging and process control. The study assesses their capabilities for RF devices, sensors, and hybrid circuits, offering insights into their unique characteristics and tradeoffs.

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Cutting-edge Nano Electronic Devices: A Comparative Review

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  1. Pros: High Ion:Ioff Excellent Ioff Robust to temperature/radiation Embedded memory (hysterisis) Potential for RF device and sensor and hybrid circuit Simple base structure Cons: Difficult to scale to low voltage Hermetic packaging Bounce/settling time Stiction Reliability at surface of contact Hot switching NanoRelay

  2. Pros: Potential for Low voltage “Soft landing” High Ion:Ioff Excellent Ioff Robust to temperature/radiation Embedded memory (hysterisis) Potential for RF device and sensor Simple fab process Cons: Hermetic Packaging Only demonstrated at larger scales AC “reset” required for low voltage operation Energy Reversible Relay

  3. Pros: High Ion:Ioff Better Ioff (not as good as relay) Potential for RF and sensor No mechanical contact Potential for 1 ns response Cons: Oxide charging Process control Hermetic package Tradeoffs required to achieve high conducting state speed Advantage over FET for benefit? NEMFET

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