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Application: magnetic data storage

Application: magnetic data storage. H . Novel New Materials with Colossal Magnetoresistance (CMR) Martha Greenblatt, Rutgers University, DMR-0233697. The change in electrical resistance (  ) of a material in response to a magnetic field (H): MR = (  H -  0 )/  0. T N ~ 110K.

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Application: magnetic data storage

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  1. Application: magnetic data storage H Novel New Materials with Colossal Magnetoresistance (CMR) Martha Greenblatt, Rutgers University,DMR-0233697 The change in electrical resistance () of a material in response to a magnetic field (H): MR = (H - 0)/ 0

  2. TN ~ 110K no interplane tunneling No MR x=0.202D VRH Ca3-xThxMn2O7 : transport properties inter-plane tunneling yields 65 % MR (magnetoresistance)

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