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Peter Matheu EE 235 – “Nanoscale Fabrication” Professor Connie Chang-Hasnain

Nanoimprint Lithography. Peter Matheu EE 235 – “Nanoscale Fabrication” Professor Connie Chang-Hasnain. April 14, 2008. Outline. Introduction to Nanoimprint Lithography (NIL) Promise UV curing for NIL Motivation for work Cross-bar circuits Single layer resist NIL Issues

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Peter Matheu EE 235 – “Nanoscale Fabrication” Professor Connie Chang-Hasnain

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  1. Nanoimprint Lithography Peter Matheu EE 235 – “Nanoscale Fabrication” Professor Connie Chang-Hasnain April 14, 2008

  2. Outline • Introduction to Nanoimprint Lithography (NIL) • Promise • UV curing for NIL • Motivation for work • Cross-bar circuits • Single layer resist NIL • Issues • Best line patterns with NIL G. Y. Jung, et al, App. Phys. A, 81, 2005. Peter Matheu

  3. Nanoimprint Lithography - Basics • By using a patterned mold, or a shallow 3D pattern, we can transfer a pattern with dimensions below traditional optical lithographic limits. • Can be used in either a lift-off or etch mask pattern transfer method. • For smallest features sizes the resist is cured to the substrate using UV light G. Y. Jung, et al, Nano Letters, 6, 2006. Peter Matheu

  4. Capillary Action • Capillary forces spread the resist throughout the mold • By engineering the surface energies of the mold and the substrate, very little resist is left between the edge of the mold and the substrate. G. Y. Jung, et al, Nano Letters, 4, 2004. Peter Matheu

  5. Capillary Forces at Work Of course, the capillary forces take time to reach a uniform resist thickness. ~30min. G. Y. Jung, et al, Nano Letters, 4, 2004. Peter Matheu

  6. Single Layer Resist NIL The single layer recipe for: • Rigidity • Release • Viscosity • UV response G. Y. Jung, et al, App. Phys. A, 81, 2005. G. Y. Jung, et al, Nano Letters, 4, 2004. Peter Matheu

  7. Issues with a Single Layer Resist • Goal: Avoid etch mask  simplicity • NIL challenge  no undercut with a mold • Lift-off  desire an undercut for resist • Issue  rabbit ears Peter Matheu

  8. Process for 17nm ½ pitch SNAP transfer method: • Selectively etch a superlattice • Shadow (tilted) evaporation • Transfer to sacrificial layer • Transfer to underlying layers/substrate Uniform pressure for the NIL process is accomplished by employing optically patterned disks in the vicinity of the NIL template. G. Y. Jung, et al, Nano Letters, 6, 2006. Peter Matheu

  9. A. The nanoimprint mold from the SNAP process B. Transferred pattern in resist C. Pattern in resist transferred to form metal nanowires G. Y. Jung, et al, Nano Letters, 6, 2006. Peter Matheu

  10. Conclusion Motivation for further work • A molecular monolayer of switching ‘material’ • A 34x34 cross-bar structure at 50nm ½ pitch10Gbit/cm2 • At 17nm ½ pitch (with 15nm wide lines) ~100Gbit/cm2 Peter Matheu

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