Conclusion

2. Conclusion • We have discussed the effect of the p-AlGaN EBL of different thicknesses on the ESD characteristics of GaN-based blue LEDs. • During the experiments, an HTG p-AlGaN layer was insertebetween the InGaN–GaN MQW and the LTG p-GaN top contact layer. As a result, the p-AlGaN EBL with a suitable thickness of 130 nm could effectively suppress TD-related pits, thus resulting in the exhibition of enhanced ESD characteristics and higher Vr. • Our conclusions are supported by the data that is presented in the study and the measurements of the characteristics for the experimental LEDs that contained thickened p-AlGaNEBLs in GaN-based blue LEDs

3. Reference • 製作於圖形化藍寶石基板上的InGaN發光二極體之相關壽命測試及界面溫度量測分析莊文魁http://research.ncku.edu.tw/re/articles/c/20080307/7.html • Chung-Hsun Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai, and S. J. Chang Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs • C. M. Tsai, J. K. Sheu, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo, and Y. K. Su, “High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD,” IEEE Photon. Technol. Lett., vol. 18, no. 11, pp. 1213–1215, Jun. 1, 2006, and references therein. • Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDsChung-Hsun Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai, and S. J. Chang

4. Thanks for your attention