semisouth mcasp.msstate/

1. SemiSouth Laboratories and Mississippi State Univ. http://www.semisouth.com http://www.mcasp.msstate.edu/ Mississippi Center for Advanced Semiconductor Prototyping

2. SemiSouth Laboratories, Inc.Silicon Carbide Electronics Specialists • Formed in July 2000 as a partnership - incorporated in Jan. 2002 • A “spin-off” of Mississippi State. • Currently has 10 full-time employees • (including 5 recent MSU graduates) • Technology license in final stages of negotiation • MSU will hold minority stake in SSL in exchange for royalty-free, exclusive license for MSU SiC technology 1 Research Blvd., Suite 201 Starkville, MS 39595 www.semisouth.com 662-324-7607

3. SiC Wafer Size Comparison

4. Benefits of SiC Power Devices • Lower On-resistance => increased system efficiency • Higher Frequency => smaller passive components • Higher Temperature=> relaxed cooling requirements Payoff: Improved System Performance (size, weight, cost, reliability, efficiency) Potential automotive applications: 1. Hybrid-electric vehicle: compact, efficient, high-temperature DC conversion 2. High-temperature applications: In-situ combustion monitoring, brake sensor, etc.

5. SiC High Temperature Power Devices Enable Advanced DoD “More Electric” Platforms in Future Battle Scenarios Power Conditioning SiC HIGH TEMP HIGH POWER ELECTRONICS • Runs hotter with smaller cooling systems • More reliable • Higher thermal capacity • Greater temperature margin • More efficient • More power for the $ • 75% less space

6. Benefits of SiC RF Devices • Higher Voltage => increased system efficiency • Higher Linearity => improved broadband performance • Higher Temperature=> higher power density Payoff: Improved System Performance (size, weight, cost, reliability, efficiency)

7. SiC Advantages for Transmitters Transmitter Size, Weight & Cost Normalized Transistor Power Level • Higher Power Transistors • Fewer Circuits • Fewer Modules • Smaller, Lower Cost Systems • Improved Thermal Conductivity • Easier Cooling • High Temperature Capability • More Cooling Options • Higher Voltage Operation • Higher Device Impedance • Reduced Distribution Losses per Watt • Reduced Parasitics per Watt • Higher Frequency Operation • Higher Efficiency & Wider Bandwidth 100 90 80 70 60 50 RF Amplifiers 40 30 Power Supplies 20 10 Other 0 1x 2x 3x 4x The transistor power level drives solid state transmitter and T/R module size, weight, and cost. Use of SiC is projected to reduce all three by 50% or more in the near future.

8. Start Start SiC substrate Si substrate Collector Collector Collector n-type epi Collector n-type epi SiC substrate Si substrate Base p-type epi Collector Base diffusion p-type Collector Si substrate SiC substrate Collector Collector Emitter Implant Emitter Diffusion Si substrate SiC substrate 1600°C silane implant anneal oxidation Collector Collector Si substrate SiC substrate B E E B Isolation etch with SiC RIE Lithography & metal contacts Collector Collector SiC substrate Si substrate E B E C Oxidation; Lithography & metal contacts Generic condensed BJT fabrication process for Si (above) and SiC (left) Collector SiC substrate C

9. Emerging Materials Research Lab (EMRL) Dual-tube, 75 mm diameter SiC reactor Growth of SiC epitaxy since 1995 (All major polytypes) Mississippi Center for Advanced Semiconductor Prototyping (MCASP) P, N, SI epitaxy development Basic Device design & development Characterization (PL, CV, DLTS) Scale-up all processes for manufacturing System prototypes, virtual incubator MSU - SiC BACKGROUND

10. MCASP - Background The Mississippi Center For Advanced Semiconductor Prototyping (MCASP) is one of the leading research institutions doing research in SiC devices. The Mississippi State University facility is exclusively used for SiC semiconductor electronics prototyping and research. --- The principle advantages of SiC power devices are their low on-resistance, improved frequency and higher operating temperatures. These advantages increase system efficiency, reduces the number of passive components and cooling requirements respectively. The advantages of SiC RF devices are their higher voltage, higher linearity and higher operating temperature which improves efficiency, broadband performance and power density.

11. Leveraging Basic Research into AdvancedTechnology at Mississippi State UniversityRapid, economical transfer of government sponsored technology development into systems • Component Production • New Small Businesses • Semiconductor Industry Basic Materials Development • SiC Power Device Prototyping • 10 to 100X Improvement in Power Density • From MSU research • Systems Production • Defense OEM’s • Commercial OEM’s

12. SEMISOUTHLABORATORIES GOAL: Become a leading supplier of SiC discrete and integrated electronic devices. Power Rectifiers & Switches High-frequency power amplifiers Smart Power/RF Integrated Circuits • Fast, effective technology transfer from Mississippi Center for Advanced Semiconductor Prototyping (MCASP). • Uses university resources to establish immediate low-volume production.

13. Materials / Circuit Design BJT VJFET Lateral JFET Smart Power I.C.’s MCASP / S.B. Diode PIN Diode SemiSouth Product Development 1994 2001 2002 2003 2000 Technology 600 V SIT for high-power radar transmitt. & cell-phone base st. Commercialization 600 V SBD for biomedical 1800 V BJT for DC-DC conv. in space 1800 V PIN for power cond. Smart power I.C. for satellite smart structural control & commercial lamp ballasts Applications

14. SemiSouth Organization Chart • 10 full-time employees in Jan. 2002 • 8 with advanced degrees • 6 MSU graduates M. State - MCASP SSL leases time as-needed

15. MCASP Organization Chart Full-Time Staff Totals: MCASP Ph.D. - 4 M.S. - 2 B.S. - 1 Tech. - 3 SemiSouth Ph.D. - 1 M.S. - 2 B.S. - 2 Tech. -1 • 10 Graduate Students • 4 Undergrad Students

16. Research Park • Aerial View • RTC building to be added in 2002-3 • 20,000 s.f. • 7,500 s.f. lab space including clean room

17. MCASP Facilities • Lam 9400 RIE system • Lam 9900 PECVD system • Hitachi SEM • GCA g-line stepper • Varian e-beam • Varian sputter • Test Equipment to 3 kV, 400 A • Automatic prober to 400°C • SiC epitaxy reactors

18. Lam 9900 PECVD • Used to deposit SiO2 for implant mask or final passivation • High Density Plasma (one microwave and one RF power source) • SiH4 (Si source) and O2 (oxygen source) • NF3 chamber clean • Donated by Lam Research, Inc., May 2000

19. Summary - SemiSouth • SemiSouth will have govt. revenues > $1.5 M over the next 3 years to fund engineering & device IP development. • MCASP Incubator will house device production facilities for next 3-5 years. • 10 full-time high-tech jobs already created… mostly filled with MSU graduates • SemiSouth will build a privately owned SiC epi development and production facility. • Additional capital will expand this facility.

20. Summary - MCASP • MCASP launched to move SiC technology towards Advanced Technology Demonstrations. • A total of $11M in funding expected over next 36-48 months for discrete and integrated power devices. • SemiSouth business creates economic development & increases MSU research $$ • MSU Research & Tech. Corp will build 20,000 sq. ft incubator facility to house MCASP, SemiSouth, high-tech businesses in 2001-2.

21. Acknowledgments • Office for Research • Research Technology Corporation • Government Sponsors • (AFRL, ONR, BMDO) • Industry affiliates