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Karl Hess and Full Band Monte Carlo: The Beginning

Karl Hess and Full Band Monte Carlo: The Beginning. Sam Shichijo Texas Instruments Inc. Dallas, Texas.

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Karl Hess and Full Band Monte Carlo: The Beginning

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  1. Karl Hess and Full Band Monte Carlo: The Beginning Sam Shichijo Texas Instruments Inc. Dallas, Texas

  2. “LPE In1–xGaxP1–zAsz (x~0.12, z~0.26) DH laser with multiple thin-layer (<500 Å) active region” E. A. Rezek, N. Holonyak, Jr., B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, and J. D. Fairing Appl. Phys. Lett. 31, 288 (1977) “Ballistic transport in semiconductor at low temperatures for low-power high-speed logic,” M. S. Shur and L. F. Eastman, IEEE Trans. Electron Devi(-es, ED-26, p. 1677, 1979. “Orientation Dependence of Ballistic Electron Transport and Impact Ionisation”, H. Shichijo, K. Hess, and G.E. Stillman, Electronics Letters, Vol.16, No.6, March 1980. “The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs,” Persall, Capasso, et al, Solid-State Eletron. 1978 “Negative differential resistance through real-space electron transfer,” K. Hess, H. Morkoc, H. Shichijo and B.G. Streetman, Appl. Phys. Lett. 36(6), 15 September 1979. “Monte Carlo simulation of real-space electron transfer in GaAs-AlGaAs heterostructures,” T.H. Glisson, J.R. Hauser, M. A. Littlejohn, K. Hess, B.G. Streetman and H. Shichijo, J. Appl. Phys. 51(10), October 1980.

  3. “Simulation of high-field transport in GaAs using a Monte Carlo method and pseudopontential band structures,” H. Shichijo, K. Hess and G.E. Stillman, Appl. Phys. Lett. 38(2), 15 January 1981. “Band-structure-dependent transport and impact ionization in GaAs,” Phys. Review B, vol. 23, No. 8, 15 April 1981.

  4. “Our present knowledge of high-field transport in particular materials is limited to regions close to the band edges. In the near future we should be able to penetrate further into the bands, proceeding hand in hand with the detailed studies of band structure now becoming available, and perhaps even contributing to these studies. Such advances should make possible a more detailed understanding of avalanche and perhaps ultimately of the problem that first stimulated interest in these studies, dielectric breakdown.” Esther Conwell, “High Field Transport in Semiconductors” 1967.

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