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High school student Nabeel Chowdhury electrodepositing Bi 2 O 3 for RRAM

Electrodeposited Metal Oxides for Solid-State Memory Jay A. Switzer, Missouri University of Science and Technology, DMR 1104801. Outcome : Researchers at Missouri University of Science and Technology have electrodeposited thin-film metal oxides that show promise for solid-state memory.

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High school student Nabeel Chowdhury electrodepositing Bi 2 O 3 for RRAM

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  1. Electrodeposited Metal Oxides for Solid-State MemoryJay A. Switzer, Missouri University of Science and Technology, DMR 1104801 Outcome: Researchers at Missouri University of Science and Technology have electrodeposited thin-film metal oxides that show promise for solid-state memory. Impact: Solid-state memory is used in everyday devices such as smart phones, tablet computers, and laptops. It is fast replacing traditional hard drives. Electrodeposition is inexpensive, and could lower the cost of solid-state memory. Explanation: A new type of solid-state memory called resistance random access memory (or RRAM) is based on metal oxide materials. It is highly scalable and fast. Materials for RRAM exhibit a phenomenon known as resistance switching. Films of bismuth oxide (Bi2O3) and cobalt oxide (Co3O4) can be electrodeposited that exhibit non-volatile resistance switching. Professor Jay A. Switzer is in the Chemistry Department and the Materials Research Center at Missouri University of Science and Technology. He led the team that developed the electrochemical method to deposit cobalt oxide and bismuth oxide, two materials that show promise for nonvolatile solid-state memory. The research team actively recruits undergraduate and high school students. High school student Nabeel Chowdhury electrodepositing Bi2O3for RRAM (courtesy of J. A. Switzer)

  2. Resistance Switching in Electrodeposited Metal OxidesJay A. Switzer, Missouri University of Science and Technology, DMR 1104801 As the size of solid-state memory continues to shrink, there is urgent need for highly scalable memory devices. An emerging technology is resistance random access memory (RRAM) that is based on resistance switching in materials such as transition metal oxides. Bismuth oxide (Bi2O3) and cobalt oxide (Co3O4) undergo resistance switching at room temperature. The mechanism of resistance switching involves the forming and breaking of nanoscale conducting metallic filaments. The Bi filaments produced in the device shown in the figure have a superconducting transition at 3.8 K. RRAM devices based on the materials would use low power, because the switching occurs at low current and voltage. Room-temperature resistance switching in an electrodeposited bismuth oxide thin film. RRAM devices based on the material would use low power, because the switching occurs at low current and voltage. (courtesy of J. A. Switzer)

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