SiGen Equipment & Applications

1. SiGen Equipment & Applications

2. 1 2 3 3 2 4 4 1 “Thin” Layer Transfer Process Donor Reclaim SiGen’s technology enables the transfer of thin layers onto semiconductor or other material substrates Surface Finish Cleave Plane Formation Wafer Bond Cleave Cleave Plane Formation. Plasma Bond Step: using a proprietary plasma-activation bond process. Cleave Step (rT-CCP™): using a proprietary cleave process. Surface Finishing Step: using a proprietary gas-phase non-contact smoothing process. . Plasma-Activation Tool DB&C Tool

3. Standalone Plasma-Activation Tool • Plasma activation bonding - Achieve equivalent bond strength at low temperatures <350C as compared to thermal wet bond treatments >800C • High surface energy for bonding of various materials • Proven HVM Process and systems –200mm and 300mm systems shipped

4. Standalone Plasma-Activation Tool

5. SiGen’s DB&C Tool • rT-CCP™ - Low as-cleaved surface roughness - Uniform long range surface roughness • Enables cleaving of dissimilar materials –SOQ, SOG, GeOI • Proven HVM Process and systems – 200mm and 300mm systems shipped

6. SiGen’s DB&C Tool

7. SiGen’s Integrated Solution • IP (Patents License) • Layer-Transfer Technologies - Thin Layer-Transfer - Plasma Bonding - Layer-Transfer - Surface Finishing • Equipment Technologies - Plasma Tool Technology - rT-CCP™ Cleave Tool Technology • New Material Building Blocks - Strained-SOI - GeOI - SOQ - SOG - Si on CMOS

8. SiGen’s Innovations • Cold Process – Allows unique dissimilar material systems • Non-Contact Smoothing – Best ultra-thin SOI uniformity • Plasma-Bonding – Excellent dry fusion bond specifications - Wide applicability in multiple fields - Unique In-Situ bond technology • Proven Compatibility - With next-generation applications - With existing semiconductor process equipment Allow high-yield and cost-effective formation of 3D, SOI, SOQ, SOG, GeOI, and other material systems

9. Semiconductor Applications

10. SOI & Strained SOI Application • Multiple commercial license • Development of strained-SOI ongoing • 200mm and 300mm SOI proven in production • New strained-SOI developed and being implemented 300mm SOI Wafer Strained-SOI (SSOI)

11. DSB – Direct Silicon Bond Si-Si Hybrid Orientation Technology As-Cleaved EPI-Smooth + Anneal <110> direction (across and along view) <110> direction (across and along view)

12. Donor Reclaim Cleavable Wafer Processed CMOS Wafer Deposit CVD Oxide/Polish PA Bond Cleave Wafer Post Processing 2 3 1 4 5 Donor Wafer Stacked CMOS/Device Structures • SiGen’s layer-transfer can be used for building stacked devices - Build CMOS/Device substrate with interconnects - Deposit CVD oxide and polish - Bond & cleave silicon film (1000-5000Å range) - Post-cleave processing Processed CMOS Substrate

13. Silicon on Quartz (SOQ) Application • Quartz base substrate for optical and RF applications • Single-crystal silicon layer • Higher quality and performance for HDTV Projectors - Better brightness - Lower Cost - Higher Resolution - Faster speed - Higher circuit density

14. A C B Large-Area Glass (SOG) 300mm Silicon Wafer Silicon Tile Silicon Tile [180mm x 230mm] Gen 2 Glass [370mm x 470mm] Donor Tile Plates Gen 2 Glass [370mm x 470mm]