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J. A. Misewich et al ., Science 300 , 783 (2003) M. Freitag et al ., Phys. Rev. Lett. 93 , 7 (2004)

J. A. Misewich et al ., Science 300 , 783 (2003) M. Freitag et al ., Phys. Rev. Lett. 93 , 7 (2004) . p + silicon substrate. *Heinze et al. , Phys. Rev. Lett. 89 , 10 (2002). cos 2 θ. Nanotube axis. Drain. Source. I sd = 18 μ A.

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J. A. Misewich et al ., Science 300 , 783 (2003) M. Freitag et al ., Phys. Rev. Lett. 93 , 7 (2004)

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  1. J. A. Misewich et al., Science 300, 783 (2003) M. Freitag et al., Phys. Rev. Lett. 93, 7 (2004)

  2. p+ silicon substrate

  3. *Heinze et al., Phys. Rev. Lett. 89, 10 (2002)

  4. cos2θ Nanotube axis

  5. Drain Source Isd = 18 μA

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