Lateral Organic Devices MRSEC (Johns Hopkins University) DMR05-20491

1. Lateral Organic DevicesMRSEC (Johns Hopkins University) DMR05-20491 Background: Most organic devices, from organic light emitting diodes to organic spintronic devices vertical devices, where the essential interfaces are buried and thus not subject to investigation. This work: Using a novel fabrication method to fabricate lateral devices,as schematically shown in Fig.1. The lateral geometry allows the application of a transverse field through the gate terminal at the back of the substrate, allowing the surface potentials at the junction to be probed directly using Scanning Kelvin probe microscopy (SKPM) while the device is in operation. Fig.1: Schematics of a lateral device, also showing the molecular structures and their energy levels. Fig. 2: Variation of built-in potential with applied lateral voltage (forward and reverse) and gate terminal grounded. B. M. Dhar, G. S. Kini, G. Xia, B. J. Jung, N. Markovic, and H. E. Katz, “Field-effect-tuned lateral organic diodes,” Proceedings of the National Academy of Sciences 107, 3972 (2010).