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硅光子学中的光源问题

硅光子学中的光源问题. 冉广照 rangz@pku.edu.cn 北京大学物理学院 介 观物理国家重点实验室 2012.07. 04. 存在什么问题 ?. Silicon light. Philip Ball, Nature 409 974 (2001). How Silicon Light ?. Silicon . Inter/intra -bands. Lumin . centers. Light emitters on Si. Direct-gap Si materials. Nano- structures.

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硅光子学中的光源问题

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  1. 硅光子学中的光源问题 冉广照 rangz@pku.edu.cn 北京大学物理学院 介观物理国家重点实验室 2012.07. 04

  2. 存在什么问题?

  3. Silicon light Philip Ball, Nature409 974 (2001)

  4. How Silicon Light ? Silicon Inter/intra -bands Lumin. centers Light emitters on Si Direct-gap Si materials Nano- structures Direct-gap Si materials pn , MOS, Quantum Cascade ... Er,Yb, C, defects ... Porous-Si, Si/SiO2SLs Nano-Si ... ? ? ? ? ? ? FeSi2 SiGe, GeSn ... Organic, III-V LD … Light Wavelength, CMOS，Efficiency EQE:1% ECE 1%; optical gain 10% 30%; CW New, OP Laser

  5. Si-based quantumcascade EL 420 umx 420 um Al p-Si 0.21nm Science 290, 2277(2000)

  6. Si-based quantumcascade EL Science 290, 2277(2000)

  7. Band structure of CGe3Sn 0.71 eV

  8. Band structure of CSi2Sn2 0.90 eV

  9. Light emission for silicon nanostructures Porous silicon Silicon nanoparticles EL from LED based on PS EL from SiO2/Si/SiO2 Related theory and computation

  10. Porous silicon in our lab Color emission Appl. Phys. Lett. 80 842(2002) 2.9 ; 2.15; 1.67; 1.0 nm

  11. III-V laser on Silicon • 1984 GaAs/AlGaAs DH Laser: LT; Pulsed (MIT) • 1985 DH Laser: RT; Pulsed (MIT) • 1986 DH Laser: RT; Pulsed (MOCVD; JAP) • 1988 GaInAsP 1.3 m RT; CW (MOCVD; France) • 1990 GaInAsP 1.5 m RT; Pulsed (MOCVD; JAP) • …. • 1996 GaInAsP 1.3 m RT; CW (Bonding) …… IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 8, NO. 2, FEBRUARY 1996 173

  12. Si-GaAs 直接生长 APL 57,593(1990)

  13. 混合硅基激光 Campenhout, et al OPTICS EXPR 15 6744 (2007) Fang, et al, OPTICS EXPR 14,9203 (2006) 化集成工艺为对准封装 Hong et al, PHOTON. TECHN. LETT.22,1411(2010) US Patent 12/539.500;CN Patent : 200810226036.6

  14. 混合硅基激光 Infrared microscopic images of the Si hybrid laser operating at RT.

  15. Prospect remark • IC工艺兼容的Si基激光器是最终的追求目标。 • 目前实用的解决方案是硅混合激光。 存在的问题： 下一步： • Si-Ge,GeSn等体系与成熟的微电子工艺完全兼容，可重点关注; 硅基III-V的制备仍要关注。 • 尺寸匹配的纳激光器提上日程。

  16. International Technology Roadmap for Semiconductors , 2008

  17. Outline • Surface Plasmons • Electrical Surface Plasmon • Plasmon Laser

  18. Bulk plasmon mode Maxwell’s 4th equation Taking time derivative

  19. Solution of bulk plasmonmode  p k Transverse mode Longitudinal mode

  20. Plasma oscillation

  21. Plasmons • Quantized plasma waves: i.e. longitudinal oscillations of the electron plasma at ωp

  22. Observation of bulk plasmons ωout = ωin ± nωp Doped semiconductors: ωp~ 10 meV Measure by Raman scattering: Metals: ħωp ~ 3–20 eV observe by electron energy loss spectroscopy : Ein~ keV n-type GaAs, RT; N = 1.8 × 10 23 m–3 ωp= 19 meV (150 cm–1)

  23. Solution of SPP Mode 做表面波假定：隐逝场 如何成立？

  24. SPP Field and wave vector Propagation triangle

  25. SPP Field and wave vector Boundary conditions

  26. SPP and Bulk plasmondispersion d=1  p sp （Note）

  27. Topography of SPP Electric Fields

  28. Topography of SPP Electric Fields Ex x x

  29. SPPs in semiconductors

  30. Localized surface plasmons • Colloidal gold is not gold colored ! • Localized plasma oscillations at surface of metal nanoparticles • ωsp ~ ω/√( εd+2) i.e. ωp/√3 for air-metal boundary, but varies somewhat with size MesoGold® • pure gold nanoparticles suspended in water

  31. LSPP in a nano-nutshell From M. Stockman

  32. Localized Surface Plasmon Field for Silver Nanosphere in Vacuum

  33. LSP between Silver Nanosphere in Vacuum

  34. Brief remarks • SPP • SPP mode • SPP properties

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