Download
1 / 12
120 likes | 134 Views
This project focuses on various aspects of materials used in Information and Communications Technology, including laser writing experiments, p-i-n structures, lithography, strain-field evaluation, structural characterization, and device evaluation.
E N D
WP 1 Materials for Information and Communications Technology : Overview - ESR 1, 2, 3 & 4 Lead beneficiary: ROME Collaborating Partners: UMR, Tyndall-UCC, NOTT, SHEFF, UCA, SGENIA, ULANC NOTT Laser writing experiments SHEFF p-i-n structures and lithography processing time- and cross-correlation measurements UCA SEM and TEM for post-treatment strain-field evaluation and structural characterization SGENIA Device evaluation and dissemination of findings ULANC Materials analysis ESR 1 – TYNDALL-UCC Modelling of dilute N semiconductors (hydrogenated and untreated) ESR 2 - ROME Laser writing of nanoscale-LEDs based on dilute nitrides ESR 3 - UMR Novel dilute-nitride (GaIn)(Nas)-based emitters (epitaxially grown by MOVPE) ESR 4 - ROME Hydrogenation of dilute nitrides for single photon emitters in photonic crystals
WP 1 MIR LEDs: ESR 1 Modelling of hydrogenated and dilute N semiconductors Supervisor: Prof. Eoin O’Reilly; Collaborating Partners: ROME, UMR, ULANC, SHEFF, NOTT Objectives: To provide relevant band structure information to support the design, development and analysis of dilute nitride metamorphic nanostructures ESR: Reza Arkani MSc in Photonics Shahid Beheshti University, Tehran, Iran Awaiting work permit and visa (likely start: Oct – Nov)
E1 E2 E3 H1 H2 H3 • Using tight-binding and k.pmodels to: • Support design and analysis of single photon sources at telecom wavelengths • (Rome and Marburg) • Optimise electronic and optical properties of Ga(SbN) quantum dots • (Lancaster) • Investigate type-II In(AsSbN)/InAs/Al(AsSb) structures for mid-IR LEDs • (Lancaster)
WP 1 LEDs at telecom wavelength: ESR 2,Karyanand M.S. SHARMA Laser writing of nanoscale-LED based on dilute nitrides Supervisor: Prof. A. Polimeni; Collaborating Partners: NOTT, UMR, ULANC, SHEFF, UCA Awaiting visa (likely start: Nov) Route for creating nano-LEDs and ordered array of nano-LEDs at telecom wavelengths - (InGa)(AsN)/GaAs QWs emitting at 1.31 and 1.55 mm - Laser writing routine - Electrically-driven single-photon emission type I or II MQWs or QDs - Characterize material TEM, AFM, PL, EL - Device processing - Device testing
WP 1 MOVPE dilute nitrides: ESR 3, Shalini Gupta Novel dilute-nitride (GaIn)(Nas)-based emitters epitaxially grown by MOVPE Supervisor: Prof. K. Volz; Collaborating Partners: ROME, SHEHH, NOTT, Tyndall-UCC, UCA, and SGENIA Quantitative structural characterization of various dilute nitride alloys (grown in Marburg & Lancaster): (GaIn)(NAs) QWs, Ga(NAsP) QWs, In(NAsSb) QDs, InSb QDs in Ga(NAs) • Various STEM techniques: • Aberration-corrected high angle annular dark field imaging • Aberration-corrected high resolution imaging & strain state analysis • Image simulation using different codes • MOVPE growth of (GaIn)(NAs) QW samples
Example: Quantitative composition and homogeneity evaluation of Ga(NAsP) Scattered intensity for dilute nitrides: Characteristic behaviour Challenge: transfer to 3-dimensional structures (QDs)
WP 1 Integration of single-photon sources in PhC: ESR 4, Mike S. YOUNIS Hydrogenation of dilute nitrides for single photon emitters in photonic crystals Supervisor: Prof. A. Polimeni; Collaborating Partners: Tyndall-UCC, NOTT, ULANC, SHEFF, UCA, UMR, and SGENIA Awaiting visa (likely start: Nov) - Single-photon sources at 1.31 and 1.55 mm - Deterministic positioning in PhC cavities - (InGa)(AsN)/GaAs QWs emitting at 1.31 and 1.55 mm - Hydrogenation routine - Highly polarized 1D emitters into PhC cavities - Characterize material TEM, AFM, PL, EL testing
WP 1 Integration of single-photon sources in PhC: ESR 4 Hydrogenation of dilute nitrides for single photon emitters in photonic crystals Supervisor: Prof. A. Polimeni; Collaborating Partners: Tyndall-UCC, NOTT, ULANC, SHEFF, UCA, UMR, and SGENIA Low resolution with Ti mask Improved electron-beam lithography processing by replacing Ti with a HSQ(hydrogen silsesquioxane, [HSiO3/2]n , n=8) resist HSQ Ti
WP 1 Integration of single-photon sources in PhC: ESR 4 Hydrogenation of dilute nitrides for single photon emitters in photonic crystals Supervisor: Prof. A. Polimeni; Collaborating Partners: Tyndall-UCC, NOTT, ULANC, SHEFF, UCA, UMR, and SGENIA Improved electron-beam lithography processing by replacing Ti with HSQ resist and using Ga(AsN) epilayers (300 nm) instead of QWs (6 nm)
WP 1 Integration of single-photon sources in PhC: ESR 4 Hydrogenation of dilute nitrides for single photon emitters in photonic crystals Supervisor: Prof. A. Polimeni; Collaborating Partners: Tyndall-UCC, NOTT, ULANC, SHEFF, UCA, UMR, and SGENIA Improved electron-beam lithography processing by replacing Ti with HSQ resist Exciton and biexciton detected Random emission given by Poisson function m=1, exciton m=2, biexciton
WP 1 Integration of single-photon sources in PhC: ESR 4 Hydrogenation of dilute nitrides for single photon emitters in photonic crystals Supervisor: Prof. A. Polimeni; Collaborating Partners: Tyndall-UCC, NOTT, ULANC, SHEFF, UCA, UMR, and SGENIA Highly polarized wires suitable for optimal coupling with PCh cavities
WP 1 Integration of single-photon sources in PhC: ESR 4 Hydrogenation of dilute nitrides for single photon emitters in photonic crystals Supervisor: Prof. A. Polimeni; Collaborating Partners: Tyndall-UCC, NOTT, ULANC, SHEFF, UCA, UMR, and SGENIA Highly polarized wires suitable for optimal coupling with PCh cavities M. Felici et al., Phys. Rev. Appl. 2, 064007 (2014)
