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Valley degeneracies in (111) Si quantum wells

Objective Resolve discrepancies in experimentally observed and theoretically predicted valley degeneracies Study effect of surface morphology on the electronic structure Approach Supercell tight-binding calculations to model surface miscuts

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Valley degeneracies in (111) Si quantum wells

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  1. Objective Resolve discrepancies in experimentally observed and theoretically predicted valley degeneracies Study effect of surface morphology on the electronic structure Approach Supercell tight-binding calculations to model surface miscuts Effective mass based valley-projection model to determine the directions of valley-minima of large supercells Impact Atomistic basis representation is essential to capture the effect of mono-atomic steps on the electronic structure Surface miscut of (111) Si is found to be the origin of breaking of 6 fold valley degeneracy into lower 2 fold and higher 4 fold valley degeneracies Fig: Origin of 2-4 splitting in miscut (111) Si QWs Results Flat (111) Si QW shows 6 fold valley degeneracy Miscut causes 2-4 splitting due to different effective masses in confinement direction Valley degeneracies in (111) Si quantum wells

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