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POWER ELECTRONICS AND DRIVES 5ET2

This syllabus covers the construction, characteristics, and applications of power electronic devices such as SCR, GTO, power transistor, power MOSFET, IGBT, and more. It also includes the principles and control techniques of rectifiers, inverters, choppers, cycloconverters, and various types of motors.

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POWER ELECTRONICS AND DRIVES 5ET2

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  1. POWER ELECTRONICS AND DRIVES 5ET2 Prof. V. N. Bhonge Dept. of Electronics & Telecomm. Shri Sant Gajanan Maharaj College of Engg. Shegaon – 444203 vnbhonge@gmail.com

  2. PE& D Syllabus SSGMCE Shegaon Unit I: SCR, Triac, Diac-construction, characteristics, two transistor analogy for turning ON of a SCR, different methods of turning ON of a SCR, turn OFF mechanism, Thyristor firing circuit using UJT. Introduction to GTO, power transistor, power MOSFET, IGBT - their construction & characteristics Unit II: Principle of phase control, half wave controlled rectifier, half controlled bridge & fully controlled bridge rectifier for resistive and RL load, derivation for output voltage and current, effect of freewheeling diode, single phase dual converters. Three phase half controlled bridge and fully controlled bridge rectifier. Dept. of E & T Prof. V. N. Bhonge

  3. SSGMCE Shegaon Unit III: Classification of circuit for forced commutation, series inverter, improved series inverter, parallel inverter, output voltage and waveform control, principle of operation for three phase bridge inverter in 120 deg. and 180 deg. mode, single phase transistorized bridge inverter, current source inverter, harmonics reduction techniques. Unit IV: Basic principles of chopper, time ratio control and current limit control techniques, voltage commutated chopper circuit, Jones chopper, step-up chopper and AC chopper. Basic principle of cycloconverter, single phase to single phase cycloconverter. Dept. of E & T Prof. V. N. Bhonge

  4. SSGMCE Shegaon Unit V: DC Motor: Principle of Operation, Types of Motor, Speed Control of Shunt Motor: Flux Control, Armature voltage control, using phase controlled rectifier, Speed Control of Series Motor: Flux Control, Rheostatic Control, chopper control. Stepper Motor: Construction, Working, characteristics and applications. Application of power electronic circuit in single phase DC drives. Unit VI: Single phase induction motor: Construction, Working, characteristics and applications. Three phase induction motor: Working, characteristics, speed control method: Armature voltage, V/F control, rotor control, slip power recovery scheme and applications. AC servo motor: Principal of operation and characteristic. Dept. of E & T Prof. V. N. Bhonge

  5. SSGMCE Shegaon TEXT BOOKS: 1. M. Ramamoorthy, Thyristor and their applications. 2. B.L. Theraja: “Electrical Technology”, Volume-2, S. Chand Publications. REFERENCE BOOKS : 1. M. H. Rashid, “Power Electronics Circuits, Devices and Application”, Pearson Edu. 2. Joseph Vithayathil, “Power Electronics: Principles and Applications”, McGraw-Hill. 3. M.D.Singh, K.B.Khanchandani, “Power Electronics”, Tata McGraw-Hill. 4. Devdatta Y. Shingare, “A Text book of Industrial & Power Electronics”, Electrotech Pub. 5. Nagrath Kothari, “Electrical Machines”, TMH Publications. Dept. of E & T Prof. V. N. Bhonge

  6. SSGMCE Shegaon . Dept. of E & T Prof. V. N. Bhonge

  7. Power electronics refers to control and conversion of electrical power by power semiconductor devices wherein these devices operate as switches. • "Electronic power converter" is the term that is used to refer to a power electronic circuit that converts voltage and current from one form to another. • Rectifier converting an AC voltage to a DC voltage, • Inverter converting a DC voltage to an AC voltage, • Chopper or a switch-mode power supply that converts a DC voltage to another DC. • Cycloconverter and cycloinverter converting an AC voltage to another AC voltage.

  8. Interdisciplinary Nature of Power Electronics SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  9. Applications of Power Electronics SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  10. Applications SSGMCE Shegaon • Heating and lighting control • Induction heating • Uninterruptible power supplies (UPS) • Fluorescent lamp ballasts: Passive; Active • Electric power transmission • Automotive electronics • Electronic ignitions • Motor drives • Battery chargers • Alternators • Energy storage • Electric vehicles • Alternative power sources: Solar; Wind; Fuel Cells • And more! Dept. of E & T Prof. V. N. Bhonge

  11. Thyristor SSGMCE Shegaon SCR—silicon controlled rectifier Thyristor Opened the power electronics era –1956, invention, Bell Laboratories –1957, development of the 1st product, GE –1958, 1st commercialized product, GE –Thyristor replaced vacuum devices in almost every power processing area. Use in high power situation. Thyristor has the highest power-handling capability. Dept. of E & T Prof. V. N. Bhonge

  12. Why Germanium is not used for manufacturing Controlled Rectifiers SSGMCE Shegaon • Resistivity of Silicon is 33x102Ωm • Resistivity of Germanium is 0.47Ωm • Ge is having very less ability to withstand reverse voltage. Dept. of E & T Prof. V. N. Bhonge

  13. Thyrister Family SSGMCE Shegaon • SCR—Silicon Controlled Rectifier • Diac • TRIAC = Triode Thyrister • GTO = Gate Turn Off Thyristor • IGBT = Insulated Gate Bipolar Junction Transistor • LASCR = Light Activated SCR • MOS = Metal Oxide Semiconductor • MCT = MOS Controlled Thyristor • MTO = MOS Turn Off Thyristor • ETO = Emitter Turn Off Thyristor • IGCT = Insulated Gate Controlled Thyristor • SITH = Static Induction Thyristor Dept. of E & T Prof. V. N. Bhonge

  14. Thyrister Family Cont…. SSGMCE Shegaon • NPN BJT = NPN Bipolar Junction Transistor • N-Channel MOSFET = N-Channel Metal Oxide Silicon Field Effect Transistor • SIT = Static Induction Transistor • RCT = Reverse Conducting Thyristor • GATT = Gate Assisted Turn Off Thyristor Dept. of E & T Prof. V. N. Bhonge

  15. Thyrister Family SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  16. SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  17. SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  18. Ratings of Power Devices SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  19. Current and future power semiconductor devices development direction.

  20. Power semiconductor device variety SSGMCE Shegaon FRED : Fast Recovery Epitaxial Diodes  MOV:Metal oxide varistor  PIC:Programmable Interface Controllers Dept. of E & T Prof. V. N. Bhonge

  21. SCR / Thyristor SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  22. Appearance and symbol of thyristor SSGMCE Shegaon Traic Dept. of E & T Prof. V. N. Bhonge

  23. Thyristors SSGMCE Shegaon • Most important type of power semiconductor device. • Have the highest power handling capability, they have a rating of 5000V / 6000A with switching frequencies ranging from 1KHz to 20KHz. • Is inherently a slow switching device compared to BJT or MOSFET. • Used as a latching switch that can be turned on by the control terminal but cannot be turned off by the gate. Dept. of E & T Prof. V. N. Bhonge

  24. Structure of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  25. V-I Characteristics of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  26. Thyristor Main Parameters: There’re several parameters related to static & dynamic performance of the thyristor, these parameters are as follow : 1-VAK- thyristor voltage at steady state 2 V; 2-VBO- -break over voltage , voltage after which thyristor will turning on at constant gate current ; 3-VBR- break down voltage in reverse biasing state; 4-IH- thyristor holding current :this a minimized load current keeping the thyristor in conducting state ( if the current goes down the thyristor will switch-off); 5- IL- thyristor latching current :this a minimized load current keeping the thyristor in conducting state after removing the gate signal ; 6-VGT- minimum gate voltage required to firing the thyristor at given loadind condition , VGT  0.8…12V; 7-IGT- minimum gate current., IGmax- maximum gate current ; 8-di/dt- speed of (increasing/decreasing) of thyristor current ; 9-dv/dt - speed of (increasing/decreasing) of thyristor voltage .

  27. V-I Characteristics of SCR SSGMCE Shegaon Latching current Minimum anode current that must flow through the SCR in order for it to stay on initially after gate signal is removed. Holding Current Minimum value of anode current, required to maintain SCR in conducting state. Dept. of E & T Prof. V. N. Bhonge

  28. Effects of gate current SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  29. Structure and equivalent circuit of thyristor SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  30. Physics of thyristor operation SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  31. Two Transistor Model of SCR SSGMCE Shegaon   Dept. of E & T Prof. V. N. Bhonge

  32. Two Transistor Model of SCR SSGMCE Shegaon • For 0 < VAK < VBR(F), • Turn Q2 ON by applying a current into the Gate • This causes Q1 to turn ON, and eventually both transistors SATURATE • VAK = VCEsat + VBEsat • If the Gate pulse is removed, Q1 and Q2 still stay ON! Dept. of E & T Prof. V. N. Bhonge

  33. Two Transistor Model of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  34. Two Transistor Model of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  35. Two Transistor Model of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  36. Two Transistor Model of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  37. Two Transistor Model of SCR SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  38. Methods of Thyristor Turn-on SSGMCE Shegaon • Thermal Triggering • Light Triggering • High Voltage Triggering • dv/dt Triggering • Gate Current • DC Triggering • AC Triggering • Pulse Triggering Dept. of E & T Prof. V. N. Bhonge

  39. Gate Triggering Methods SSGMCE Shegaon Efficient & reliable method for turning on SCR. • Types • R - Triggering. • RC - Triggering. • UJT - Triggering. Dept. of E & T Prof. V. N. Bhonge

  40. R-Triggering SSGMCE Shegaon Resistance firing circuit Dept. of E & T Prof. V. N. Bhonge

  41. RC Triggering SSGMCE Shegaon RC half-wave trigger circuit Dept. of E & T Prof. V. N. Bhonge

  42. UJT - Triggering SSGMCE Shegaon Waveforms UJT Triggering Circuit Dept. of E & T Prof. V. N. Bhonge

  43. SCR trigger circuit using DIAC SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  44. SCR trigger circuit using Optocoupler SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  45. Turn-on Characteristics SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  46. How do you turn it OFF? SSGMCE Shegaon • Cause the forward current to fall below the value of the “holding” current, IH • Reverse bias the device Dept. of E & T Prof. V. N. Bhonge

  47. Turn-off Characteristics SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  48. TRIAC SSGMCE Shegaon • TRIAC is used for the control of power in AC circuits. • It is equivalent of two reverse parallel-connected SCRs with one common gate. • Conduction can be achieved in either direction with an appropriate gate current. it is thus a bi-directional gate controlled thyristor with three terminals. Dept. of E & T Prof. V. N. Bhonge

  49. Structure and Symbol of TRIAC SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

  50. Triac Characteristics SSGMCE Shegaon Dept. of E & T Prof. V. N. Bhonge

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