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標準製程

標準製程. Charge pumping 量測平台建置 Flash memory 量測平台建置. Agilent 81110A. I ds. N +. N +. P - type. I cp. A. A. SMU. SMU. 建置者 : 呂明霈博士. Switch. Charge pumping 量測平台. 使用規範 : 使用 LabView 控制 4156, 81110 switch 為手動操作. Control PC (LabView). 81110A. 4156A. I cp. V peak.

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標準製程

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  1. 標準製程 Charge pumping 量測平台建置 • Flash memory量測平台建置

  2. Agilent 81110A Ids N+ N+ P - type Icp A A SMU SMU 建置者: 呂明霈博士 Switch Charge pumping量測平台 • 使用規範: • 使用LabView控制4156, 81110 • switch為手動操作 Control PC (LabView) 81110A 4156A

  3. Icp Vpeak Charge-Pumping Measurement Vpeak Vth Icp = Nit × q × f × A Vfb Vbase Where Icp is charge-pumping current; q is electronic charge; A is device area; f is frequency; Nit is trapped charge; Nit = Dit× ΔE Where Dit is interface trap density; ΔE is Fermi level energy difference between accumulation and inversion;

  4. Charge-Pumping Measured Data

  5. Pulse Vg Pulse Vd N+ N+ P - type Switch Flash Memory量測平台 架設者: 吳其昌 • 使用規範: • 使用ICS控制4156, 41501, 16440 • switch為手動操作 • pulse 最快到1 μs • 目前無加熱功能 Control PC 16440A 4156A 41501A

  6. Flash Memory量測平台-window Id-Vg properties Program: Vg 10V 1ms, Vd 9V 1ms (HE) Erase: Vg -10V 1ms, Vd 9V 1ms (BBHH)

  7. Flash Memory量測平台-speed Program speed Erase speed

  8. Flash Memory量測平台-retention retention properties Measuring time: 1 ~ 10000 sec Program: Vg 10V 1ms, Vd 9V 1ms Erase: Vg -10V 1ms, Vd 9V 1ms

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