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Magnetic Properties of Thin Film Oxide Heterostructures

Magnetic Properties of Thin Film Oxide Heterostructures. G. Sterbinsky,J. Cheng and B. W. Wessels National Science Foundation DMR-0520513. Molecular beam epitaxy has been employed to synthesize new nanocomposite materials for magnetoelectric and spintronic devices for information storage.

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Magnetic Properties of Thin Film Oxide Heterostructures

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  1. Magnetic Properties of Thin Film Oxide Heterostructures G. Sterbinsky,J. Cheng and B. W. Wessels National Science Foundation DMR-0520513 • Molecular beam epitaxy has been employed to synthesize new nanocomposite materials for magnetoelectric and spintronic devices for information storage. • Recently Fe3O4/BaTiO3 and CoFe2O4/PMNT heterostructures have been fabricated. Magnetic transitions in the Fe3O4 and CoFe2O4 thin films were observed at the structural phase transition temperatures in BaTiO3 and PMNT substrates, respectively. • Quantitative analysis indicates these magnetic transitions are due to magnetoelastic coupling where the interfacial strain is playing a crucial role. Fig. 1 (a) Percent strain in the Fe3O4 thin film on BaTiO3 (b) the magnetoelastic contribution to the anisotropy introduced by BaTiO3 phase transition (c) magnetic moment of Fe3O4 G. E. Sterbinsky, B. W. Wessels, et al. Appl. Phys. Lett., 96, 1 (2010)

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