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Effects of the CdS nanowire layer on the photocurrent generation in CIGS based heterojunction solar cells. Hadi Zarei , Rasoul Malek far, Physics Department, faculty of basic science, Tarbiat Modarres University, Tehran , Iran , and Hossein Movla
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Effects of the CdS nanowire layer on the photocurrent generation in CIGS based heterojunction solar cells • HadiZarei, RasoulMalek far, • Physics Department, faculty of basic science, TarbiatModarres University, Tehran , Iran, • and HosseinMovla • Department of Solid State Physics, Faculty of Physics, University of Tabriz, Tabriz • And with the special thanks to • PiaoLiu • University of Kentucky, Lexington, Kentucky, USA
Content: • Operation mechanism of solar cells • A short history of solar cells • Materials characterization • Thin film solar cell - Objective of the our wok - Results and discussion - References
Photon absorption mechanism in typical p-n junction hv hν≥Eg CB Eg VB n p Depletion region
A short history of solar cells Generation I: Bulk Si Solar Cells -Too expensive -14–20% sunlight conversion efficiency Generation II: Thin Film Solar Cells -low cost to high cost -10 (commercial types) - up to 40% (multijunction) Generation III: - Organic solar cells - bulk heterojunction - Dye senisitzd solar cells - Quantum well solar cells - Quantum Dots solar cells
Crystalline Si solar cells • Advantages • High natural resources • Known technology • Available mass-production line • Disadvantages • Indirect band gap of crystalline Si • Expensive to produce • Low efficiency in cloudy place
Thin film solar cell • Amorphous silicon (a-Si) and other thin-film silicon (TF-Si) • Cadmium Telluride (CdTe) • Dye-sensitized solar cell (DSC) and other organic solar cells • Copper Indium Gallium Selenide (CIS or CIGS)
ZnO:Al Transparent conductive oxide ZnO CdS Cu(In1-xGax)Se2 Mo Glass substrate CIGS based solar cells
CIGS Bulk CdS Band diagram of typical graded bulk-CdS\CIGS CIGS
Optical absorption of CIGS Data from: Markus Gloeckler, “Device Physics of Cu(In,Ga)Se2 Thin Film Solar Cells“, Ph.D. Thesis, Colorado State University, 2005.
Al CIGS CdS NWs SnO2 or ZnO ITO Nanowire-CdS\CISG Al SnO2 or ZnO ITO
By using the generation rate, drift diffusion model, boundary conditions,
x1 is the distance from the surface of CdS to the beginning of the depletion region x2 is the thickness of the CdS x3is the distance from the surface of CdS to the end of the depletion region x4 is the thickness of CdS plus the thickness of CIGS
- For 100 nm CdS layer, photocurrent gain is about 12%, from 23.7 mA/cm2 to 26.6 mA/cm2 - Simulation shown that for 200 nm CdS layer, the photocurrent gain is 17%, from 22.4 mA/cm2 to 26.1 mA/cm2 - There is not difference between photocurrent generation in 300 nm CdS layer - Thus a 17% improvement in short-circuit current density (Jsc) can be expected - In CdSlayer, Jp= 1.1×10-3 mA/cm2, which is far smaller than the current generated in the depletion region Jdr (usually greater than 20 mA/cm2)
References [1] L. Vivien et al., “Optical limiting properties of singlewall carbon nanotubes”, Opt. Commun., Vol. 174, pp. 271-275, 2000. [2] KhadijeKhalili, AsgharAsgari, HosseinMovla, A. Mottaghizadeh, H. A. Najafabadi , “Effect of interface recombination on the performance of SWCNT\GaAsheterojunction solar cell”, Procedia Engineering-Physics Procedia, Vol. 8, pp. 275–279, 2011. [3] Ingrid Repins et. al., “Improved Efficiency of CIGS Thin Film Solar Cells with Chemically Deposited ZnS Buffer Layers by Air Annealing Formation of Homojunction by Solid Phase Diffusion”, in: 33rd IEEE Photovoltaic Specialist, San Diego, California, USA, 2008. [4] HosseinMovla, FooziehSohrabi, KhadijeKhalili, A. Nikniazi, “Design and optimization of CIGS based solar cells”, in: proceeding of the conference of Optics and its applications, Yerevan - Ashtarak, Armenia, 2011. [5] K. L. Chopra, P. D. Paulson and V. Dutta, “Thin-film solar cells: an overview”, Prog. Photovolt: Res. Appl, Vol. 12, pp. 69-92, 2004.