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대면적 CIGS 흡수층 제조용 공정 및 장비기술 2014. 07. 10.

대면적 CIGS 흡수층 제조용 공정 및 장비기술 2014. 07. 10. 목 차. Ⅰ. Cu( In,Ga )( S,Se ) 2 (CIGS) 태양전지 양산기술 Sulfurization after Selenization (SAS) H 2 Se vs. Se-vapor. Ⅱ. 저비용 Se-vapor 이용 기술 nano -shower Se RTP ( 발명 ) Proof-of-concept 특허기술 포트폴리오. Ⅰ. CIGS 태양광 모듈 양산기술 (SAS). l 3 l.

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대면적 CIGS 흡수층 제조용 공정 및 장비기술 2014. 07. 10.

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  1. 대면적 CIGS 흡수층 제조용 공정 및 장비기술 2014. 07. 10.

  2. 목 차 • Ⅰ. Cu(In,Ga)(S,Se)2 (CIGS) 태양전지양산기술 • Sulfurization after Selenization (SAS) • H2Se vs. Se-vapor • Ⅱ. 저비용 Se-vapor 이용 기술 • nano-shower Se RTP (발명) • Proof-of-concept • 특허기술 포트폴리오

  3. Ⅰ. CIGS 태양광 모듈 양산기술 (SAS) l 3l

  4. Ⅰ. CIGS 태양광 모듈 양산기술 (H2Se vs Se-vapor) l 4l

  5. Ⅱ. 저비용 Se-vapor 이용 기술 (nano shower Se-RTP) Se-shower generator Se-shower/H2S RTP Se Reservoir (Liquid or Gas Type) Se PermeableBlock Se-showering RTP Substrate (Glass, etc) No Se layer • Very short distance for Se-vapor transport • Se confinement to minimize PM (= machine-down) • In-situ adjustment of Se vapor pressure • In-situ H2S annealing l 5l

  6. Ⅱ. 저비용 Se-vapor 이용 기술 (nano shower Se-RTP) • Se-shower generator Se Path (conceptual) Se Reservoir (Liquid or Gas Type) Se PermeableBlock Very Short Transport Distance Pre-deposited CuInGa Layer Substrate (Glass, etc) • Se-permeable material block • No machining is required for the Se path • Se-cracking capability to supply active Se species • Se delivery is not required • Nopreparation for Se film l 6l

  7. Ⅱ. 저비용 Se-vapor 이용 기술 (proof-of-concept) Temp ④ T_Substrate ⑤ T_Se CuGa/In (0.6 m) ⑥ ③ ② Mo (0.25 m) Preheating ① Selenization ~ 10min PV200 Time Major variables for process optimization ① rampup speed ② preheating temperature, time, pressure ③ rampup speed ④ substrate temperature, time, pressure ⑤ Se temperature (shower pressure), time ⑥ cooling speed (Key variables in Bold) l 7l

  8. Ⅱ. 저비용 Se-vapor 이용 기술 (proof-of-concept) 5 m S1 (450 oC) S2 (500 oC) S3 (550 oC) 10 m • Absolutely void-free throughout the entire film • Excellent roughness • Single phase at 550 oC(no need of further annealing for flat Ga)* • Self-densification (note of being thinner at higher temperature) l 8l

  9. Ⅱ. 저비용 Se-vapor 이용 기술 (proof-of-concept) Uniform distribution of defect density Ld > 1 m SCR (0V) = 0.31 m Na = 5.2e15 /cm3 Eg = 0.99eV l 9l

  10. Ⅱ. 저비용 Se-vapor 이용 기술 (특허포트폴리오) l 10l

  11. 감사합니다

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