1 / 10

Design Consideration for Future RF Circuits

Design Consideration for Future RF Circuits. Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium 27 May 2007 Author : Behzad Razavi Presenter : Kyungjin Yoo. Introduction. RF circuits - 2 trends Device level: speed, noise System level: System-on-chips New paradigm

nitsa
Download Presentation

Design Consideration for Future RF Circuits

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Design Consideration for Future RF Circuits Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium 27 May 2007 Author : Behzad Razavi Presenter : Kyungjin Yoo

  2. Introduction • RF circuits - 2 trends • Device level: speed, noise • System level: System-on-chips • New paradigm • Multi-band, multi-mode transceivers • Baseband processors • Issues in this paper • Technology scaling • Design techniques

  3. Impact of Technology Scaling • Lower supply voltages • Higher gate leakage currents • Lower transistor output impedances

  4. Supply Voltage Scaling • Noise, linearity, gain • Trade off • Mixer • Oscillator • VCO

  5. Transistor Output Impedance • Lower the Q of oscillators • deQing effect of ro >> Rp • Negligible in 90-nm technology : ro=2.3 Kohm • Problematic in 65-nm and 45-nm generation

  6. Gate Leakage Current • Gate leakage current in 90-nm tech : 10~100pA/micrometer^2 • 90-nm : IG/Cp70-700 microV/ns • Tin=50ns causes 3.5-35mVpp ripple

  7. Design Techniques • Low-Voltage Active Mixers • Multi-Band Techniques

  8. Low-Voltage Active Mixers • Principle : bias current to the switching pair and the loads < bias current to the RF transconductor device

  9. Multi-Band Techniques • Goal • Minimize area • avoid long interconnects at high freq. • Layout compaction • Stacked inductors: LNA,VCO • Nested inductors: dual-band oscillator

  10. Thank you! Q&A

More Related