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There are three reasons we want to develop a new CTE measurement method:

A new CTE Measurement Method (L11). Mingzhi Wei UCO/Lick Observatory, University of California, Santa Cruz, USA Chinese National Astronomical Observatories, Beijing, China. There are three reasons we want to develop a new CTE measurement method:

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There are three reasons we want to develop a new CTE measurement method:

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  1. A new CTE Measurement Method (L11) Mingzhi Wei UCO/Lick Observatory, University of California, Santa Cruz, USA Chinese National Astronomical Observatories, Beijing, China There are three reasons we want to develop a new CTE measurement method: 1. Charge diffusion of thick back illuminated high-resistivity CCD 2. For Nod and shuffle type observing we need CCDs with excellent CTE. We need a way to measure CTE more sensitively and accurately 3. We want to know the CTE at different light levels. X-ray plot of Regular CCD X-ray plot of Thick back illuminated high-resistivity CCD

  2. Test results with the new CTE measurementCTE vs. Light level Figure 2-1c Serial CTE vs. light level of Homamatsu CCD Figure 2-2c Vertical CTE of our Hamamatsu test CCD with different light levels

  3. Figure 2-4 A flat field exposure with 5000 times of serial charge pumping of 36 pixels forward and 36 reverse Serial Charge Pumping

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