1 / 16

Tutorial: From Semi-Classical to Quantum Transport Modeling

Tutorial: From Semi-Classical to Quantum Transport Modeling. Dragica Vasileska Professor Arizona State University Tempe, AZ USA. Outline:. What is Computational Electronics? Semi-Classical Transport Theory Drift-Diffusion Simulations Hydrodynamic Simulations

nora
Download Presentation

Tutorial: From Semi-Classical to Quantum Transport Modeling

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Tutorial: From Semi-Classical to Quantum Transport Modeling Dragica Vasileska Professor Arizona State University Tempe, AZ USA

  2. Outline: • What is Computational Electronics? • Semi-Classical Transport Theory • Drift-Diffusion Simulations • Hydrodynamic Simulations • Particle-Based Device Simulations • Inclusion of Tunneling and Size-Quantization Effects in Semi-Classical Simulators • Tunneling Effect: WKB Approximation and Transfer Matrix Approach • Quantum-Mechanical Size Quantization Effect • Drift-Diffusion and Hydrodynamics: Quantum Correction and Quantum Moment Methods • Particle-Based Device Simulations: Effective Potential Approach • Quantum Transport • Direct Solution of the Schrodinger Equation (Usuki Method) and Theoretical Basis of the Green’s Functions Approach (NEGF) • NEGF: Recursive Green’s Function Technique and CBR Approach • Atomistic Simulations – The Future • Prologue

  3. What is Computational Electronics?

  4. The need for semiconductor device modeling • Increased costs for R&D and production facilities, which are becoming too large for any one company or country to accept. • Shorter process technology life cycles. • Emphasis on faster characterization of manufacturing processes, assisted by modeling and simulation. With permission from Intel Corp.

  5. Computer simulations, often called technology for computer assisted design (TCAD) offer many advantages such as: • Evaluating "what-if" scenarios rapidly • Providing problem diagnostics • Providing full-field, in-depth understanding • Providing insight into extremely complex problems/phenomena/product sets • Decreasing design cycle time (savings on hardware build lead-time, gain insight for next product/process) • Shortening time to market

  6. Some TCAD Prerequisites Are: • Modeling and simulation require enormous technical depth and expertise not only in simulation techniques and tools but also in the fields of physics and chemistry. • Laboratory infrastructure and experimental expertise are essential for both model verification and input parameter evaluations in order to have truly effective and predictive simulations. • Software and tool vendors need to be closely tied to development activities in the research and development laboratories. R. Dutton, Stanford University, the father of TCAD.

  7. Historical Development of Device Simulation: • 1964: Gummel introduced the decupled scheme for the solution of the Poisson and the continuity equations for a BJT • 1968: de Mari introduced the scaling of variables that is used even today and prevents effectively overflows and underflows • 1969: Sharfetter and Gummel, in their seminal paper that describes the simulation of a 1D Silicon Read (IMPATT) diode, introduced the so-called Sharfetter-Gummel discretization of the continuity equation H. K. Gummel, “A self-consistent iterative scheme for one-dimensional steady state transistor calculation”, IEEE Transactions on Electron Devices, Vol. 11, pp.455-465 (1964). A. DeMari, “An accurate numerical steady state one-dimensional solution of the p-n junction”, Solid-state Electronics, Vol. 11, pp. 33-59 (1968). D. L. Scharfetter and D. L. Gummel, “Large signal analysis of a Silicon Read diode oscillator”, IEEE Transaction on Electron Devices, Vol. ED-16, pp.64-77 (1969).

  8. Coupling of Transport Equations to Poisson and Band-Structure Solvers D. Vasileska and S.M. Goodnick, Computational Electronics, published by Morgan & Claypool , 2006.

  9. What Transport Models exist? • Semiclassical FLUID models (ATLAS, Sentaurus, Padre) • Drift – Diffusion • Hydrodynamics • PARTICLE DENSITY • velocity saturation effect • mobility modeling crucial • Particle density • DRIFT VELOCITY, ENERGY DENSITY • velocity overshoot effect problems

  10. What Transport Models Exist? • Semiclassical PARTICLE-BASED Models: • Direct solution of the BTE Using Monte Carlo method • Eliminates the problem of Energy Relaxation Time Choice • Accurate up to semi-classical limits • One can describe scattering very well • Can treat ballistic transport in devices

  11. Why Quantum Transport? • SIZE-QUANTIZATION • EFFECT • Quantum Mechanical • TUNNELING 3. QUANTUM INTERFERNCE EFFECT

  12. What Transport Models Exist? • Quantum-mechanical WIGNER Function and DENSITY Matrix Methods: • Can deal with correlations in space BUT NOT WITH CORRELATIONS IN TIME Advantages: Can treat SCATTERING rather accurately Disadvantages: LONG SIMULATION TIMES

  13. What Transport Models Exist? • Non-Equilibrium Green’s Functions approach is MOST accurate but also MOST difficult quantum approach • FORMULATION OF SCATTERING rather straightforward, IMPLEMENTATION OF SCATTERING rather difficult • Computationally INTENSIVE

  14. D. Vasileska, PhD Thesis, Arizona State University, December 1995.

  15. Range of Validity of Different Methods

  16. Summary • Different transport models exist with different accuracy and different computational needs for modeling the wide variety of devices that are used in practice every day • The goal of Computational Electronics is to teach you what models are appropriate for modeling specific device structure and what are the limitations and the advantages of the model used

More Related