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Bond-center hydrogen

Dynamics of Local Vibrational Modes in Semiconductors Gunter Luepke, College of William & Mary, DMR 0600861. The stability of Si-H bonds under operational conditions is critical for the long-term operation of many semiconductor devices, which rely on hydrogen passivation technology.

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Bond-center hydrogen

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  1. Dynamics of Local Vibrational Modes in SemiconductorsGunter Luepke, College of William & Mary, DMR 0600861 The stability of Si-H bonds under operational conditions is critical for the long-term operation of many semiconductor devices, which rely on hydrogen passivation technology. It has been shown that the dissociation of Si-H bonds is responsible for the hot carrier deterioration of MOSFETs and the photo degradation of hydrogenated amorphous silicon solar cells (known as Staebler Wronski effect). Hence it is important to study and understand the effects of energetic electrons and electron-hole pairs on the stability of various H bonds in semiconductors. Here we study the effect of energetic 3He ions on the stability of a most fundamental defect in silicon, namely the bond-center hydrogen (BCH) [Figure, top]. Specifically, BCH is found to decay exponentially to primarily infrared inactive hydrogen sites as a function of ion dose, with a decay constant determined by the electronic energy deposited by each ion [Figure, bottom]. Bond-center hydrogen

  2. Dynamics of Local Vibrational Modes in SemiconductorsGunter Luepke, College of William & Mary, DMR-0600861 Education: Ph.D. students involved in the program include Erik Spahr and Pjerin Luli. Erik Spahr started his Ph.D. project on vibrational lifetimes of hydrogen in ZnO and MgO in January 2007. Dr. S. V. S. Nageswara Rao, a post-doc who worked on this project from 06/2004 to 05/2007, has been selected for a faculty position in an Indian Central University. Presently he is working as a lecturer (tenured position) in the department of physics at Pondicherry University, Pondicherry 605 014, India. Societal Impact: Hydrogen plays an indispensable role in the fabrication and long-term reliability of semiconductor electronic and photo-voltaic devices. Hence, a comprehensive understanding of the functional properties of hydrogen in various semiconductors is crucial to the technologies required for the full development of the information age and for the ever-pressing search for clean energy. The critical challenge is to understand the effect of energetic particles and various kinds of radiations on the stability of bonded hydrogen in semiconductors which is critical for the improvement of nanoscale bond-selective material modification techniques and as well as the long-term reliability of semiconductor and photo-voltaic devices.

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